Diodes 1N4448WS - Manual (Page 2)

1N4448WS
Document number: DS30096 Rev. 13 - 2
2 of 4
www.diodes.com
September 2013
© Diodes Incorporated
1N4448WS
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 4) V
(BR)R
75  V I
R
= 2.5µA
Forward Voltage V
FM
0.62



0.72
0.855
1.0
1.25
V
I
F
= 5.0mA
I
F
= 10mA
I F = 100mA
I
F
= 150mA
Peak Reverse Current (Note 4) I
RM

2.5
50
30
25
µA
µA
µA
nA V
R
= 75V
V
R
= 75V, T
J
= +150°C
V
R
= 25V, T
J
= +150°C
V
R
= 20V
Total Capacitance C T
 4.0 pF V R = 0, f = 1.0MHz
Reverse Recovery Time t
rr
 4.0 ns
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100 Ω
Notes: 4. Short duration pulse test used to minimize self-heating.
5. Part mounted on FR-4 PC board with minimum recommended pad layouts, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
0
100
300
0 25 50 75 100 125 150
P
P
O
WE
R
DIS
S
IP
A
T
IO
N (
m
W
)
D
,
T , AMBIENT TEMPERATURE ( C)
Figure 1 Forward Current Derating Curve
A
°
200
Note 5
0.1
1
10
100
1000
0 200 400 600 800 1000 1200 1400 1600
Fig. 2 Typical Forward Characteristics
V , INSTANTANEOUS FORWARD VOLTAGE (mV)
F
I
, IN
ST
ANT
A
NEOUS
F
O
RW
ARD CU
RRENT
(
m
A)
F
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = -55°C
A
T = 25°C
A
0.10
1.0
10.0
0.01
0.001
0 20 40 60 80
V , INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3 Typical Reverse Characteristics
R
T = 100 C
A
°
T = 0 C °
A
T = 75 C °
A
T = 50 C °
A
T = 25 C °
A
T = -30 C °
A
I
, INS
T
A
N
T
A
NEOUS
REVE
RSE
CURRENT
(
A
)
R

0 4 3 2 5 1 6
V , DC REVERSE VOLTAGE (V)
Figure 4 Total Capacitance vs. Reverse Voltage
R
C
,
T
O
T
AL
C
A
P
A
C
IT
A
N
C
E (
p
F)
T
0
1
2
3
4
f = 1MHz