Diodes BAS116LPH4 - Manual (Page 2)

BAS116LPH4
Document number: DS35242 Rev. 5 - 2
2 of 4
www.diodes.com
November 2011
© Diodes Incorporated
BAS116LPH4
NEW PROD
UC
T
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage V
RRM
V RWM
V
R
85 V
RMS Reverse Voltage V
R(RMS)
60 V
Forward Continuous Current (Note 4) I
FM
215 mA
Repetitive Peak Forward Current I FRM
500 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0 μs
@ t = 1.0ms
@ t = 1.0s
I
FSM
4.0
1.0
0.5
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4) P
D
300 mW
Thermal Resistance Junction to Ambient Air (Note 4) R θJA 417 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 5) V
(BR)R
85 ⎯ ⎯ V I
R
= 100 μA
Forward Voltage V
F
⎯ ⎯
0.9
1.0
1.1
1.25
V
I
F
= 1.0mA
I
F
= 10mA
I
F
= 50mA
I
F
= 150mA
Leakage Current (Note 5) I
R
⎯ ⎯
5.0
80
nA
nA V
R
= 75V
V R = 75V, T J = 150
°C
Total Capacitance C
T
⎯ 1.5 ⎯ pF V
R
= 0, f = 1.0MHz
Reverse Recovery Time t
rr
⎯ ⎯ 3.0 μs
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100
Ω
Notes: 4. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com.
5. Short duration pulse test used to minimize self-heating effect.
0
0 25 50 75 100 125 150
P
,
P
O
WE
R
DISS
IP
A
T
IO
N (
m
W
)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Power Derating Curve, Total Package
A
Note 4
50
100
150
200
250
300
I
, INS
T
A
N
T
A
NEOUS
F
O
R
W
ARD C
U
RRENT
(
m
A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
F
0.01
0.1
1
10
100
1,000
0 0.2 0.4 0.6 0.8 1.0 1.2