Diodes BAS16TW/MMBD4148TW - Manual (Page 2)

MMBD4148TW / BAS16TW
Document number: DS30154 Rev. 14 - 2
2 of 4
www.diodes.com
December 2013
© Diodes Incorporated
MMBD4148TW / BAS16TW
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Non-Repetitive Peak Reverse Voltage V
RM
100 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage V
RRM
V
RWM
V
R
75 V
RMS Reverse Voltage V
R(RMS)
53 V
Forward Continuous Current (Note
51)
I
FM
300 mA
Average Rectified Output Current (Note
51)
I
O
150 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0µs
@ t = 1.0s
I
FSM
2.0
1.0
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5) P
D
200 mW
Thermal Resistance Junction to Ambient Air (Note 5) R
θJA
625 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-65 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 6) V
(BR)R
75 ⎯ V I
R
= 1µA
Forward Voltage V
F
⎯
0.715
0.855
1.0
1.25
V
I
F
= 1.0mA
I
F
= 10mA
I
F
= 50mA
I
F
= 150mA
Reverse Current (Note 6) I
R
⎯
1.0
50
30
25
µA
µA
µA
nA V
R
= 75V
V
R
= 75V, T
J
= +150°C
V
R
= 25V, T
J
= +150°C
V
R
= 20V
Total Capacitance C
T
⎯ 2.0 pF V
R
= 0, f = 1.0MHz
Reverse Recovery Time t
rr
⎯ 4.0 ns
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100 Ω
Notes: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
6. Short duration pulse test used to minimize self-heating effect.