Diodes BAS21TW - Manual (Page 2)

BAS21TW
Document number: DS35389 Rev. 3 - 2
2 of 4
www.diodes.com
April 2013
© Diodes Incorporated
BAS21TW
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Non-Repetitive Peak Reverse Voltage V
RM
250 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage V
RRM
V
RWM
V
R
250 V
RMS Reverse Voltage V
R(RMS)
177 V
Forward Continuous Current (Note 5) I
FM
200 mA
Non-Repetitive Peak Forward Surge Current @ t = 50µs
@ t = 100µs
@ t = 10ms
I
FSM
10
8
2
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5) P
D
300 mW
Thermal Resistance Junction to Ambient Air (Note 5) R
θJA
417 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-65 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 6) V
(BR)R
250  V I
R
= 100µA
Forward Voltage V
F

 1.05 
1.25
V
I
F
= 100mA
I
F
= 200mA
Reverse Current (Note 6) I
R

100
100 nA
µA V
R
= 200V
V
R
= 200V, T
J
= +150°C
Total Capacitance C
T
 5 pF V
R
= 6, f = 1.0MHz
Reverse Recovery Time t
rr
 50 ns V
R
= 6V, I
F
= 5mA
Notes: 5. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
6. Short duration pulse test used to minimize self-heating effect.
0 125 175
300
100
200
0
T , AMBIENT TEMPERATURE ( C)
Figure 1 Power Derating Curve, Total Package
A
°
P
,
P
O
WE
R
DIS
S
IP
A
T
IO
N (
m
W
)
D
25 100 50 75 150
50
150
250
Note 5
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2 Typical Forward Characteristics, Per Element
F
0.1
1
10
100
1,000
I
, INS
TAN
TANE
O
U
S
F
O
R
WA
R
D
C
U
R
R
EN
T
(mA
)
F
T = 150°C
A
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A