Diodes BAV170 - Manual (Page 2)

BAV170
Document number: DS30234 Rev. 11 - 2
2 of 4
www.diodes.com
January 2012
© Diodes Incorporated
BAV170
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage V
RRM
V
RWM
V
R
85 V
RMS Reverse Voltage V R(RMS)
60 V
Forward Continuous Current (Note 4) Single Diode
Double Diode
I
FM
215
125
mA
Repetitive Peak Forward Current I
FRM
500 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0 μs
@ t = 1.0ms
@ t = 1.0s
I
FSM
4.0
1.0
0.5
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4) P
D
250 mW
Thermal Resistance Junction to Ambient Air (Note 4) R θJA 500
°C/W
Operating and Storage Temperature Range T
J
, T
STG
-65 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 5) V
(BR)R
85 ⎯ ⎯ V I
R
= 100
μA
Forward Voltage V
F
⎯ ⎯
0.90
1.0
1.1
1.25
V
I
F
= 1.0mA
I
F
= 10mA
I
F
= 50mA
I
F
= 150mA
Leakage Current (Note 5) I
R
⎯ ⎯
5.0
80
nA
nA V
R
= 75V
V
R
= 75V, T
J
= 150 °C
Total Capacitance C
T
⎯ 2 ⎯ pF V
R
= 0, f = 1.0MHz
Reverse Recovery Time t
rr
⎯ ⎯ 3.0 μs
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100
Ω
Notes: 4. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com.
5. Short duration pulse test used to minimize self-heating effect.