Diodes BAV5004W - Manual (Page 2)

BAV5004W
Document number: DS30719 Rev. 3 - 2
2 of 4
www.diodes.com
September 2013
© Diodes Incorporated
BAV5004W
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Repetitive Peak Reverse Voltage V
RRM
400 V
Working Peak Reverse Voltage
DC Blocking Voltage V
RWM
V
R
350 V
RMS Reverse Voltage V
R(RMS)
247 V
Forward Continuous Current (Note 5) I
FM
300 mA
Peak Repetitive Forward Current (Note 5) I
FRM
625 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0µs
@ t = 1.0ms
I
FSM
5.0
3.0
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5) (See figure 1) P
D
300 mW
Thermal Resistance Junction to Ambient Air (Note 5) R
θJA
417 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 6) V
(BR)R
400   V I
R
= 150µA
Forward Voltage V
F



 0.93
1.09
1.29
V
I
F
= 20mA
I
F
= 100mA
I
F
= 200mA
Reverse Current (Note 6) I
R 

 1
100
µA
µA V
R
= 240V
V
R
= 240V, T
J
= +150°C
Total Capacitance C
T
 0.9 2.5 pF V
R
= 0V, f = 1.0MHz
Reverse Recovery Time t
rr
  50 ns
I
F
= I
R
= 30mA,
I
rr
= 3.0mA, R
L
= 100Ω
Notes: 5. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
0
50
100
25 50 75 100 125 150
P
, P
O
WE
R
DI
SSI
P
A
T
IO
N (
m
W
)
D
T , AMBIENT TEMPERATURE (°C)
A
Fig. 1 Power Derating Curve
150
200
250
0
Note 5
300
350 1,000
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
F
0 0.2 0.4 0.6 0.8 1.0 1.4 1.2
100
10
1
0.1
0.01
0.001 I,
I
N
S
TA
N
TA
N
E
O
U
S F
O
R
WA
R
D
C
U
R
R
E
N
T
(A
)
F
m
T = 25 C
J
°
T = 5 C
J
-5 °
T = 8 C
J
° 5
T = 12 C
J
° 5
T = 1 0 C
J
° 5