Diodes BAV99BRLP - Manual (Page 2)

BAV99BRLP
Document number: DS35317 Rev. 4 - 2
2 of 4
www.diodes.com
July 2011
© Diodes Incorporated
BAV99BRLP
NEW PROD
UC
T
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Non-Repetitive Peak Reverse Voltage V
RM
100 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage V
RRM
V
RWM
V R
75 V
RMS Reverse Voltage V
R(RMS)
53 V
Forward Continuous Current (Note 4) I
FM
300 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0
μs
@ t = 1.0ms
@ t = 1.0s
I
FSM
3.0
2.0
0.5
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4) P
D
500 mW
Thermal Resistance Junction to Ambient Air (Note 4) R θJA 250 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-65 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 5) V
(BR)R
75 ⎯ V I
R
= 2.5
μA
Forward Voltage V
F
⎯
0.715
0.855
1.0
1.25
V
I
F
= 1.0mA
I
F
= 10mA
I
F
= 50mA
I F = 150mA
Reverse Current (Note 5) I
R
⎯
2.5
50
30
25
μA
μA
μA
nA V
R
= 75V
V
R
= 75V, T
J
= 150
°C
V
R
= 20V, T
J
= 150 °C
V
R
= 20V
Total Capacitance C T
⎯ 2.0 pF V R = 0, f = 1.0MHz
Reverse Recovery Time t
rr
⎯ 4.0 ns
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100
Ω
Notes: 4. Device mounted on FR-4 PCB, on minimum recommended, 2oz copper pad layout.
5. Short duration pulse test used to minimize self-heating effect.