Diodes BAW101S User Manual

Baw101s new prod uc t, Features, Mechanical data

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BAW101S

Document number: DS32177 Rev. 4 - 2

1 of 4

www.diodes.com

July 2010

© Diodes Incorporated

BAW101S

NEW PROD

UC

T

HIGH VOLTAGE DUAL SWITCHING DIODE

Features

Fast Switching Speed: max. 50ns

High Reverse Breakdown Voltage: 300V

Two Electrically Isolated Elements in a Single Compact Package

Low Leakage Current: 150nA at Room Temperature

Lead, Halogen and Antimony Free, RoHS Compliant (Note 3)

"Green" Device (Note 4)

Mechanical Data

• Case:

SOT-363

Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish – Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208

Marking Information: See Page 2

Ordering Information: See Page 2

Weight: 0.006 grams (approximate)

Maximum Ratings

@T

A

= 25°C unless otherwise specified

Characteristic Symbol

Value

Unit

Repetitive Peak Reverse Voltage

Single Diode

V

RRM

300
600

V

Series Connection

Working Peak Reverse Voltage
DC Blocking Voltage

Single Diode

V

RWM

V

R

300
600

V

Series Connection

RMS Reverse Voltage

V

R(RMS)

212 V

Forward Current (Note 2)

Single Diode Loaded

I

F

250
140

mA

Double Diode Loaded

Non-Repetitive Peak Forward Surge Current @ t = 1.0

μs

I

FSM

4.5 A

Repetitive Peak Forward Current @ t = 8.3ms (Note 2)

I

FRM

625 mA



Thermal Characteristics

Characteristic Symbol

Value

Unit

Power Dissipation (Note 2)

P

D

300 mW

Thermal Resistance Junction to Ambient Air (Note 2)

R

θJA

417

°C/W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150

°C



Electrical Characteristics

@T

A

= 25°C unless otherwise specified

Characteristic Symbol

Min

Max

Unit

Test

Condition

Reverse Breakdown Voltage (Note 1)

V

(BR)R

300

V

I

R

= 100

μA

Forward Voltage

V

F

1.1 V

I

F

= 100mA

Reverse Current (Note 1)

I

R

50

150

75

nA
nA

μA

V

R

= 5V

V

R

= 250V

V

R

= 250V, T

J

= 150

°C

Total Capacitance

C

T

2.0 pF

V

R

= 0, f = 1.0MHz

Reverse Recovery Time

t

rr

50 ns

I

F

= I

R

= 30mA,

I

rr

= 0.1 x I

R

, R

L

= 100

Ω

Notes:

1. Short duration pulse test used to minimize self-heating effect.
2. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. No purposefully added lead. Halogen and Antimony Free.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.




Top View

Device Schematic

1

2

3

6

5

4

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