Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes BZT52C2V4LP - BZT52C39LP User Manual
Page 2
BZT52C2V4LP - BZT52C39LP
Document number: DS30506 Rev. 20 - 2
2 of 5
December 2013
© Diodes Incorporated
BZT52C2V4LP - BZT52C39LP
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Unit
Forward Voltage (Note 5)
@ I
F
= 10mA
V
F
0.9 V
Thermal Characteristics
Characteristic Symbol
Value
Unit
Power
Dissipation
(Note
6)
T
A
= +25°C
P
D
250 mW
Thermal Resistance, Junction to Ambient Air
(Note 6) T
A
= +25°C
R
θJA
500
C/W
Operating and Storage Temperature Range
T
J,
T
STG
-65 to +150
C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Type
Number
Marking
Code
Zener Voltage Range
(Note 5)
Maximum Zener Impedance
f = 1kHz
Maximum
Reverse
Current
(Note 5)
Typical
Temperature
Coefficient
@ I
ZTC
mV/
C
Test
Current
I
ZTC
V
Z
@ I
ZT
I
ZT
Z
ZT
@ I
ZT
Z
ZK
@ I
ZK
I
ZK
I
R
@
V
R
Nom (V)
Min (V)
Max (V)
mA
mA
uA
V
Min
Max
mA
BZT52C2V4LP
WX
2.4
2.20
2.60
5
100
600
1.0
50
1.0
-3.5
0 5
BZT52C2V7LP
W1
2.7
2.5
2.9
5
100
600
1.0
20
1.0
-3.5
0 5
BZT52C3V0LP
W2
3.0
2.8
3.2
5
95
600
1.0
10
1.0
-3.5
0 5
BZT52C3V3LP
W3
3.3
3.1
3.5
5
95
600
1.0
5
1.0
-3.5
0 5
BZT52C3V6LP
W4
3.6
3.4
3.8
5
90
600
1.0
5
1.0
-3.5
0 5
BZT52C3V9LP
W5
3.9
3.7
4.1
5
90
600
1.0
3
1.0
-3.5
0 5
BZT52C4V3LP
W6
4.3
4.0
4.6
5
90
600
1.0
3
1.0
-3.5
0 5
BZT52C4V7LP
W7
4.7
4.4
5.0
5
80
500
1.0
3
2.0
-3.5
0.2 5
BZT52C5V1LP
9Y
5.1
4.8
5.4
5
60
480
1.0
2.0
2.0
-2.7
1.2 5
BZT52C5V6LP
9A
5.6
5.2
6.0
5
40
400
1.0
1.0
2.0
-2
2.5 5
BZT52C6V2LP
9B
6.2
5.8
6.6
5
10
150
1.0
3.0
4.0
0.4
3.7 5
BZT52C6V8LP
(Note 7)
9C
6.8
6.4
7.2
5
15
80
1.0
2.0
4.0
1.2
4.5 5
BZT52C7V5LP
9D
7.5
7.0
7.9
5
15
80
1.0
1.0
5.0
2.5
5.3 5
BZT52C8V2LP
9E
8.2
7.7
8.7
5
15
80
1.0
0.7
5.0
3.2
6.2 5
BZT52C9V1LP
9F
9.1
8.5
9.6
5
15
100
1.0
0.5
6.0
3.8
7.0 5
BZT52C10LP
9G
10
9.4
10.6
5
20
150
1.0
0.2
7.0
4.5
8.0 5
BZT52C11LP
9H
11
10.4
11.6
5
20
150
1.0
0.1
8.0
5.4
9.0 5
BZT52C12LP
9J
12
11.4
12.7
5
25
150
1.0
0.1
8.0
6.0
10.0 5
BZT52C13LP
9K
13
12.4
14.1
5
30
170
1.0
0.1
8.0
7.0
11.0 5
BZT52C15LP
9L
15
13.8
15.6
5
30
200
1.0
0.1
10.5
9.2
13.0 5
BZT52C16LP
9M
16
15.3
17.1
5
40
200
1.0
0.1
11.2
10.4
14.0 5
BZT52C18LP
9N
18
16.8
19.1
5
45
225
1.0
0.1
12.6
12.4
16.0 5
BZT52C20LP
9P
20
18.8
21.2
5
55
225
1.0
0.1
14.0
14.4
18.0 5
BZT52C22LP
9R
22
20.8
23.3
5
55
250
1.0
0.1
15.4
16.4
- 5
BZT52C24LP
9S
24
22.8
25.6
5
70
250
1.0
0.1
16.8
18.4
- 5
BZT52C36LP
9W
36
34.0
38.0
2
90
350
0.5
0.1
25.2
36.5
- 5
BZT52C39LP
9X
39
37.0
41.0
2
130
350
0.5
0.1
27.3
36.8
- 5
Notes:
5. Short duration pulse test used to minimize self-heating effect.
6. Device mounted on FR-4 PCB with minimum recommended pad layout, as shown in Diodes Incorporated’s Suggested Pad Layout document, which can
be found on our website at
7. Device can withstand a repetitive, 1A pulse with tp = 300μs and T = 3s (forward or reverse direction).