Diodes BZT52C2V0 - BZT52C51 - Manual (Page 2)

BZT52C2V0 - BZT52C51
Document number: DS18004 Rev. 37 - 2
2 of 5
www.diodes.com
September 2012
© Diodes Incorporated
BZT52C2V0 - BZT52C51
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Forward Voltage @ I
F
= 10mA V
F
0.9 V
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 7) @T L = +75°C P
D
500 mW
Power Dissipation (Note 8) @T A = +25°C P D
370 mW
Thermal Resistance, Junction to Ambient Air (Note 8) R θJA 338 °C/W
Thermal Resistance, Junction to Lead (Note 9) R θJL 150 °C/W
Operating and Storage Temperature Range T J, T STG
-65 to +150 °C
Electrical Characteristics
(@T A = +25°C, unless otherwise specified.)
Type
Number
Marking
Codes
Zener Voltage Range
(Note 10)
Maximum Zener
Impedance
f = 1kHz
Maximum
Reverse
Current
(Note 10)
Temperature
Coefficient
@ I ZTC
mV/ °C
Test
Current
I
ZTC
V
Z
@ I
ZT
I
ZT
Z
ZT
@ I
ZT
Z
ZK
@ I
ZK
I
ZK
I
R
@ V
R
Nom (V) Min (V) Max (V) mA Ω mA uA V Min Max mA
BZT52C2V0 WY 2.0 1.91 2.09 5 100 600 1.0 150 1.0 -3.5 0 5
BZT52C2V4 WX 2.4 2.2 2.6 5 100 600 1.0 50 1.0 -3.5 0 5
BZT52C2V7 W1 2.7 2.5 2.9 5 100 600 1.0 20 1.0 -3.5 0 5
BZT52C3V0 W2 3.0 2.8 3.2 5 95 600 1.0 10 1.0 -3.5 0 5
BZT52C3V3 W3 3.3 3.1 3.5 5 95 600 1.0 5.0 1.0 -3.5 0 5
BZT52C3V6 W4 3.6 3.4 3.8 5 90 600 1.0 5.0 1.0 -3.5 0 5
BZT52C3V9 W5 3.9 3.7 4.1 5 90 600 1.0 3.0 1.0 -3.5 0 5
BZT52C4V3 W6 4.3 4.0 4.6 5 90 600 1.0 3.0 1.0 -3.5 0 5
BZT52C4V7 W7 4.7 4.4 5.0 5 80 500 1.0 3.0 2.0 -3.5 0.2 5
BZT52C5V1 W8 5.1 4.8 5.4 5 60 480 1.0 2.0 2.0 -2.7 1.2 5
BZT52C5V6 W9 5.6 5.2 6.0 5 40 400 1.0 1.0 2.0 -2 2.5 5
BZT52C6V2 WA 6.2 5.8 6.6 5 10 150 1.0 3.0 4.0 0.4 3.7 5
BZT52C6V8 WB 6.8 6.4 7.2 5 15 80 1.0 2.0 4.0 1.2 4.5 5
BZT52C7V5 WC 7.5 7.0 7.9 5 15 80 1.0 1.0 5.0 2.5 5.3 5
BZT52C8V2 WD 8.2 7.7 8.7 5 15 80 1.0 0.7 5.0 3.2 6.2 5
BZT52C9V1 WE 9.1 8.5 9.6 5 15 100 1.0 0.5 6.0 3.8 7.0 5
BZT52C10 WF 10 9.4 10.6 5 20 150 1.0 0.2 7.0 4.5 8.0 5
BZT52C11 WG 11 10.4 11.6 5 20 150 1.0 0.1 8.0 5.4 9.0 5
BZT52C12 WH 12 11.4 12.7 5 25 150 1.0 0.1 8.0 6.0 10.0 5
BZT52C13 WI 13 12.4 14.1 5 30 170 1.0 0.1 8.0 7.0 11.0 5
BZT52C15 WJ 15 13.8 15.6 5 30 200 1.0 0.1 10.5 9.2 13.0 5
BZT52C16 WK 16 15.3 17.1 5 40 200 1.0 0.1 11.2 10.4 14.0 5
BZT52C18 WL 18 16.8 19.1 5 45 225 1.0 0.1 12.6 12.4 16.0 5
BZT52C20 WM 20 18.8 21.2 5 55 225 1.0 0.1 14.0 14.4 18.0 5
BZT52C22 WN 22 20.8 23.3 5 55 250 1.0 0.1 15.4 16.4 - 5
BZT52C24 WO 24 22.8 25.6 5 70 250 1.0 0.1 16.8 18.4 - 5
BZT52C27 WP 27 25.1 28.9 2 80 300 0.5 0.1 18.9 21.4 - 2
BZT52C30 WQ 30 28.0 32.0 2 80 300 0.5 0.1 21.0 24.4 - 2
BZT52C33 WR 33 31.0 35.0 2 80 325 0.5 0.1 23.1 27.4 - 2
BZT52C36 WS 36 34.0 38.0 2 90 350 0.5 0.1 25.2 30.4 - 2
BZT52C39 WT 39 37.0 41.0 2 130 350 0.5 0.1 27.3 33.4 - 2
BZT52C43 WU 43 40.0 46.0 5 100 700 1.0 0.1 32.0 37.6 - 5
BZT52C47 WV 47 44.0 50.0 5 100 750 1.0 0.1 35.0 42.0 - 5
BZT52C51 WW 51 48.0 54.0 5 100 750 1.0 0.1 38.0 46.6 - 5
Notes: 7. R θJL = 132°C/W
8. Device mounted on ceramic PCB with copper pad areas 40mm 2 .
9. Thermal Resistance measurement obtained via infrared scan method.
10. Short duration pulse test used to minimize self-heating effect.