Diodes 2DD2678 - Manual

2DD2678
Document number: DS31637 Rev. 3 - 2
1 of 4
www.diodes.com
April 2010
© Diodes Incorporated
2DD2678
LOW V
CE(SAT)
NPN SURFACE MOUNT TRANSISTOR
Features
•
Epitaxial Planar Die Construction
• Ideally Suited for Automated Assembly Processes
•
Ideal for Medium Power Switching or Amplification Applications
•
Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case:
SOT89-3L
• Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
•
Ordering Information: See Page 3
•
Weight: 0.072 grams (approximate)
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
15 V
Collector-Emitter Voltage V
CEO
12 V
Emitter-Base Voltage V
EBO
6 V
Peak Pulse Current I
CM
6 A
Continuous Collector Current I
C
3 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ T
A
= 25°C P
D
0.9 W
Thermal Resistance, Junction to Ambient Air (Note 3) @ T
A
= 25°C R θJA 139 °C/W
Power Dissipation (Note 4) @ T
A
= 25°C P
D
2 W
Thermal Resistance, Junction to Ambient Air (Note 4) @ T
A
= 25°C R θJA 62.5 °C/W
Operating and Storage Temperature Range T J , T STG
-55 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Conditions
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
V
(BR)CBO
15 ⎯ ⎯ V I
C
= 10
μA, I
E
= 0
Collector-Emitter Breakdown Voltage (Note 5) V
(BR)CEO
12 ⎯ ⎯ V I
C
= 1mA, I
B
= 0
Emitter-Base Breakdown Voltage V (BR)EBO
6 ⎯ ⎯ V I E = 10
μA, I
C = 0
Collector Cut-Off Current I
CBO
⎯ ⎯ 0.1 μA
V
CB
= 15V, I
E
= 0
Emitter Cut-Off Current I
EBO
⎯ ⎯ 0.1
μA
V
EB
= 6V, I
C
= 0
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯ 90 250 mV I
C
= 1.5A, I
B
= 30mA
DC Current Gain h
FE
270 ⎯ 680 ⎯ V
CE
= 2V, I
C
= 500mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance C
obo
⎯ 26 ⎯ pF
V
CB
= 10V, I
E
= 0,
f = 1MHz
Current Gain-Bandwidth Product f
T
⎯ 170 ⎯ MHz
V CE = 2V, I C = 100mA,
f = 100MHz
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Device mounted on FR-4 PCB with 1 inch
2 copper pad layout.
5. Measured under pulsed conditions. Pulse width = 300 μs. Duty cycle ≤2%.
Top View Device Schematic Pin Out Configuration
4
3
2
1
C C
B
E
TOP VIEW
3
1
2,4
COLLECTOR
EMITTER
BASE
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