Diodes DCP69/-16/-25 - Manual (Page 2)

DCP69/-16/-25
Document number: DS30798 Rev. 7 - 2
2 of 5
www.diodes.com
April 2012
© Diodes Incorporated
DCP69/-16/-25
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Collector-Base Voltage V CBO
-25 V
Collector-Emitter Voltage V
CEO
-20 V
Emitter-Base Voltage V
EBO
-5.0 V
Collector Current I C
-1.0 A
Peak Pulse Current I
CM
-2.0 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 4) P
D
1 W
Thermal Resistance, Junction to Ambient Air (Note 4) R θJA 125 °C/W
Power Dissipation (Note 5) P D
2 W
Thermal Resistance, Junction to Ambient Air (Note 5) R θJA 62.5 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
-25 — — V I
C
= -100 μA, I
E
= 0
Collector-Emitter Breakdown Voltage (Note 6) BV CEO
-20 — — V I C = -10mA, I B = 0
Emitter-Base Breakdown Voltage BV
EBO
-5.0 — — V I
E
= -100
μA, I
C
= 0
Collector-Base Cutoff Current I
CBO
— —
-100
-10
nA
μA V
CB
= -25V, I
E
= 0
V
CB
= -25V, I
E
= 0, T
A
= 150 °C
Emitter-Base Cutoff Current I EBO
— — -100 nA V EB = -5.0V, I C = 0
ON CHARACTERISTICS (Note 6)
DC Current Gain
DCP69, DCP69-16, DCP69-25
h
FE
50
60 —
— —
—
—
V CE = -10V, I C = -5.0mA
V CE = -1.0V, I C = -1.0A
DCP69 85 — 375 V
CE
= -1.0V, I
C
= -500mA
DCP69-16 100 — 250 V
CE
= -1.0V, I
C
= -500mA
DCP69-25 160 — 375 V CE = -1.0V, I C = -500mA
Collector-Emitter Saturation Voltage V
CE(sat)
— — -0.5 V I
C
= -1.0A, I
B
= -100mA
Base-Emitter Turn-On Voltage V
BE (on)
— —
-0.7
-1.0
V
V
CE
= -10V, I
C
= -5.0mA
V
CE
= -1.0V, I
C
= -1.0A
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
f
T
40 200 — MHz V
CE
= -5.0V, I
C
= -50mA, f = 100MHz
Output Capacitance C
obo
— 17 — pF V
CB
= -10V, f = 1 MHz
Notes: 4. Device mounted on FR-4 PCB; pad layout as shown on in Diodes Inc. suggested pad layout document, which can be found on our website at
http://www.diodes.com
5. Device mounted on FR-4 PCB with 1in.
2 copper pad layout
6. Measured under pulsed conditions. Pulse width = 300
μS. Duty cycle ≤ 2%.