Diodes 2DC4617QLP - Manual (Page 2)

2DC4617QLP
Document number: DS31439 Rev. 4 - 2
2 of 5
www.diodes.com
February 2011
© Diodes Incorporated
2DC4617QLP
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage V CBO
50 V
Collector-Emitter Voltage V
CEO
50 V
Emitter-Base Voltage V
EBO
5.0 V
Collector Current - Continuous I C
100 mA
Peak Collector Current I
CM
200 mA
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 4) P
D
250 mW
Thermal Resistance, Junction to Ambient (Note 4) R θJA 500 °C/W
Operating and Storage Temperature Range T J , T STG
-55 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
V (BR)CBO
50 ⎯ V I C = 50
μA, I
E = 0
Collector-Emitter Breakdown Voltage V
(BR)CEO
50 ⎯ V I
C
= 1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage V
(BR)EBO
5.0 ⎯ V I
E
= 50 μA, I
C
= 0
Collector Cutoff Current I CBO
⎯
100
5
nA
μA V CB = 30V
V
CB
= 30V, T
A
= 150°C
Emitter Cutoff Current I
EBO
⎯ 100 nA V
EB
= 4.0V
ON CHARACTERISTICS (Note 5)
DC Current Gain
h
FE
120 270 ⎯
V
CE
= 6.0V, I
C
= 1.0mA
Collector-Emitter Saturation Voltage V
CE(SAT)
⎯ 0.2 V I
C
= 50mA, I
B
= 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯ 3.5 pF V
CB
= 12V, f = 1.0MHz, I
E
= 0
Current Gain-Bandwidth Product f
T
100 ⎯ MHz
V
CE
= 12V, I
C
= 2.0mA,
f = 100MHz
Notes: 4. Part mounted on FR-4 PCB with recommended pad layout.
5. Short duration pulse test used to minimize self-heating effect.