Absolute maximum ratings, Thermal characteristics, Esd ratings – Diodes BC807-16W/ -25W/ -40W User Manual

Page 2: Electrical characteristics

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BC807-16W/-25W/-40W

Document Number: DS30577 Rev. 7 - 2

2 of 5

www.diodes.com

November 2013

© Diodes Incorporated

BC807-16W/ -25W/ -40W



Absolute Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Unit

Collector-Base Voltage

V

CBO

-50 V

Collector-Emitter Voltage

V

CEO

-45 V

Emitter-Base Voltage

V

EBO

-6 V

Continuous Collector Current

I

C

-500 mA

Peak Collector Current

I

CM

-1.0 A

Peak Base Current

I

BM

-200 mA



Thermal Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Unit

Power Dissipation

(Note 5)

P

D

200 mW

Thermal Resistance, Junction to Ambient

(Note 5)

R

θJA

625

C/W

Operating and Storage Temperature Range

T

J,

T

STG

-65 to +150

C



ESD Ratings

(Note 6)

Characteristic Symbol

Value

Unit

JEDEC

Class

Electrostatic Discharge - Human Body Model

ESD HBM

4,000

V

3A

Electrostatic Discharge - Machine Model

ESD MM

400

V

C



Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Emitter Breakdown Voltage (Note 7)

BV

CEO

-45

V

I

C

= -10mA

Emitter-Base Breakdown Voltage

BV

EBO

-6

V

I

C

= -100µA

Collector-Emitter Cutoff Current

I

CES

-100

-5.0

nA
µA

V

CE

= -45V

V

CE

= -25V, T

J

= +150°C

Collector

I

CBO

-100

-5.0

nA

µA

V

CB

= -20V

V

CB

= -20V, T

J

= +150°C

Emitter-Base Cutoff Current

I

EBO

-100

nA

V

EB

= -5V

DC Current Gain (Note 7)

BC807-16W-7
BC807-25W-7
BC807-40W-7

h

FE

100
160
250

250
400
600

I

C

= -100mA, V

CE

= -1.0V

BC807-16W-7
BC807-25W-7
BC807-40W-7

60

100
170

I

C

= -300mA, V

CE

= -1.0V

Collector-Emitter Saturation Voltage (Note 7)

V

CE(sat)

-700

mV

I

C

= -500mA, I

B

= -50mA

Base-Emitter Voltage (Note 7)

V

BE

-1200

mV

I

C

= -300mA, V

CE

= -1.0V

Gain Bandwidth Product

f

T

100

MHz

V

CE

= -5.0V, I

C

= -10mA,

f = 50MHz

Collector-Base Capacitance

C

CBO

12

pF

V

CB

= -10V, f = 1.0MHz

Notes:

5. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
6. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.


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