Diodes BC847AT, BT, CT - Manual

BC847AT, BT, CT
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Die Construction
• Complementary PNP Types Available
(BC857AT,BT,CT)
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 2)
• "Green" Device (Note 4 and 5)
Mechanical Data
DS30274 Rev. 9 - 2 1 of 3
www.diodes.com
BC847AT, BT, CT
© Diodes Incorporated
• Case: SOT-523
• Case Material - Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
• Terminal Connections: See Diagram
• Marking Code: See Table
• Ordering Information: See Page 2
• Marking Information: See Page 2
• Weight: 0.002 grams (approximate)
Type Marking
BC847AT 1E
BC847BT 1F
BC847CT 1M
SOT-523
Dim Min Max Typ
A 0.15 0.30 0.22
B 0.75 0.85 0.80
C 1.45 1.75 1.60
D ⎯ ⎯ 0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
J 0.00 0.10 0.05
K 0.60 0.80 0.75
L 0.10 0.30 0.22
M 0.10 0.20 0.12
N 0.45 0.65 0.50
α 0 ° 8 ° ⎯
All Dimensi mm ons in
A
M
J
L D
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
50 V
Collector-Emitter Voltage V
CEO
45 V
Emitter-Base Voltage V
EBO
6.0 V
Collector Current I
C
100 mA
Power Dissipation (Note 1) P
d
150 mW
Thermal Resistance, Junction to Ambient (Note 1) R
θJA
833 °C/W
Operating and Storage Temperature Range T
j
, T
STG
-55 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
DC Current Gain (Note 3) Current Gain A
B
C
h
FE
110
200
420 —
290
520
220
450
800
— V
CE
= 5.0V, I
C
= 2.0mA
Collector-Emitter Saturation Voltage (Note 3) V
CE(SAT)
— —
250
600
mV
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
Base-Emitter Saturation Voltage (Note 3) V
BE(SAT)
—
700
900
— mV
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
Base-Emitter Voltage (Note 3) V
BE
580
—
660
—
700
770
mV
V
CE
= 5.0V, I
C
= 2.0mA
V
CE
=5.0V, I
C
= 10mA
Collector-Emitter Cutoff Current (Note 3)
I
CBO
I
CBO
— —
15
5.0
nA
µA V
CB
= 30V
V
CB
= 30V, T
A
= 150°C
Gain Bandwidth Product f
T
100 — — MHz
V
CE
= 5.0V, I
C
= 10mA,
f = 100MHz
Output Capacitance C
OBO
— — 4.5 pF V
CB
= 10V, f = 1.0MHz
BC847BT
Noise Figure
BC847CT
NF — —
10
4.0
dB
V
CE
= 5V, R
S
= 2.0k Ω,
f = 1.0kHz, BW = 200Hz
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Short duration pulse test used to minimize self-heating effect.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
B C
H
K
G
TOP VIEW
C
E B
N