Diodes BC846A-BC848C - Manual (Page 4)

BC846A – BC848C
Document Number: DS11108 Rev. 26 - 2
4 of 7
www.diodes.com
December 2013
© Diodes Incorporated
BC846A-BC848C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
BC846
BV
CBO
80
— — V I
C
= 10µA BC847 50
BC848 30
Collector-Emitter Breakdown Voltage
(Note 10)
BC846
BV
CEO
65
— — V I
C
= 10mA BC847 45
BC848 30
Emitter-Base Breakdown Voltage
BC846 / BC847
BV
EBO
6
— — V I
E
= 1µA
BC848 5
Collector Cutoff Current I
CBO
— —
15 nA V
CB
= 30V
5 µA V
CB
= 30V, T
J
= +150°C
Collector Emitter Cutoff Current
BC846
I
CES
— —
15
nA
V
CE
= 80V
BC847 15 V
CE
= 50V
BC848 15 V
CE
= 30V
Emitter Base Cutoff Current I
EBO
— — 100 nA V
EB
= 5V
Small Signal Current Gain
(Note 10)
BC846A / BC847A / BC848A
h
fe
—
200
— —
I
C
= 2.0mA, V
CE
= 5V
f=1.0kHz
BC846B / BC847B / BC848B 330
BC847C / BC848C 600
Input Impedance
(Note 10)
BC846A / BC847A / BC848A
h
ie
—
2.7
— kΩ BC846B / BC847B / BC848B 4.5
BC847C / BC848C 8.7
Output Admittance
(Note 10)
BC846A / BC847A / BC848A
h oe
—
18
— µS BC846B / BC847B / BC848B 30
BC847C / BC848C 60
Reverse Voltage Transfer
Ratio (Note 10)
BC846A / BC847A / BC848A
h
re
—
1.5x10 -4
— — BC846B / BC847B / BC848B 2x10 -4
BC847C / BC848C 3x10 -4
DC Current Gain (Note 10)
BC846A / BC847A / BC848A
h
FE
110 180 220
— I
C
= 2.0mA, V
CE
= 5V BC846B / BC847B / BC848B 200 290 450
BC847C / BC848C 420 520 800
Collector-Emitter Saturation Voltage
(Note 10)
V
CE(sat)
—
90 250
mV
I
C
= 10mA, I
B
= 0.5mA
200 600 I
C
= 100mA, I
B
= 5.0mA
Base-Emitter Turn-On Voltage(Note 10) V
BE(on)
580 660 700
mV
I
C
= 2mA, V
CE
= 5V
— — 770 I
C
= 10mA, V
CE
= 5V
Base-Emitter Saturation Voltage(Note 10) V
BE(sat)
—
700
— mV
I
C
= 10mA, I
B
= 0.5mA
900 I
C
= 100mA, I
B
= 5mA
Output Capacitance C
obo
— 3 — pF V
CB
= 10V, f = 1.0MHz
Transition Frequency f
T
100 300 — MHz
V
CE
= 5V, I
C
= 10mA,
f = 100MHz
Noise Figure NF — 2 10 dB
V
CE
=5V, I
C
=200µA
R
S
=2kΩ, f=1kHz
∆f=200Hz
Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%