Diodes BC847BVC - Manual

BC847BVC
Document number: DS30638 Rev. 5 - 2
1 of 4
www.diodes.com
April 2009
© Diodes Incorporated
BC847BVC
NPN DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
•
Epitaxial Die Construction
• Ultra-Small Surface Mount Package
•
Lead Free By Design/RoHS Compliant (Note 3)
•
"Green" Device (Note 4)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case:
SOT-563
• Case Material: Molded Plastic, "Green" Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
•
Terminal Connections: See Diagram
•
Terminals: Finish - Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
•
Marking Information: See Page 2
•
Ordering Information: See Page 2
• Weight: 0.002 grams (approximate)
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
50 V
Collector-Emitter Voltage V
CEO
45 V
Emitter-Base Voltage V EBO
6.0 V
Collector Current I
C
100 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 2) P
D
150 mW
Thermal Resistance, Junction to Ambient (Note 2) R θJA 833
°C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage (Note 5) V
(BR)CBO
50 — — V I
C
= 10 μA, I
B
= 0
Collector-Emitter Breakdown Voltage (Note 5) V
(BR)CEO
45 — — V I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage (Note 5) V
(BR)EBO
6 — — V I
E
= 1 μA, I
C
= 0
DC Current Gain (Note 5) h
FE
200 290 450 — V
CE
= 5.0V, I
C
= 2.0mA
Collector-Emitter Saturation Voltage (Note 5) V
CE(SAT)
— —
100
300
mV
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
Base-Emitter Saturation Voltage (Note 5) V
BE(SAT)
—
700
900
— mV
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
Base-Emitter Voltage (Note 5) V
BE
580
—
660
—
700
770
mV
V
CE
= 5.0V, I
C
= 2.0mA
V
CE
= 5.0V, I
C
= 10mA
Collector-Emitter Cutoff Current (Note 5)
I
CBO
I
CBO
— —
15
5.0
nA
µA V
CB
= 30V
V
CB
= 30V, T
A
= 150°C
Gain Bandwidth Product f
T
100 — — MHz
V
CE
= 5.0V, I
C
= 10mA,
f = 100MHz
Output Capacitance C
OBO
— — 4.5 pF V
CB
= 10V, f = 1.0MHz
Noise Figure NF — — 10 dB
V
CE
= 5V, R
S
= 2.0k Ω,
f = 1.0kHz, BW
= 200Hz
Notes: 1. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. No purposefully added lead.
4. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php
5. Short duration pulse test used to minimize self-heating effect.
Top View Bottom View Device Schematic
C
1
B
2
E 2
C
2
E
1
B
1
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