Diodes BC847PN - Manual (Page 2)

BC847PN
Document number: DS30278 Rev. 13 - 2
2 of 6
www.diodes.com
November 2013
© Diodes Incorporated
BC847PN
Absolute Maximum Ratings: NPN, BC847B Type (Q
1
)
(@T
A
= +25°C unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
50 V
Collector-Emitter Voltage V
CEO
45 V
Emitter-Base Voltage V
EBO
6 V
Collector Current I
C
100 mA
Peak Collector Current I
CM
200 mA
Peak Emitter Current I
EM
200 mA
Absolute Maximum Ratings: PNP, BC857B Type (Q
2
)
(@T
A
= +25°C unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
-50 V
Collector-Emitter Voltage V
CEO
-45 V
Emitter-Base Voltage V
EBO
-6 V
Collector Current I
C
-100 mA
Peak Collector Current I
CM
-200 mA
Peak Emitter Current I
EM
-200 mA
Thermal Characteristics – Total Device
(@T
A
= +25°C unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 6) Total Device P
D
200 mW
Thermal Resistance, Junction to Ambient (Note 6) R
JA
625 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-65 to +150 °C
Note: 6. For a device mounted on minimum recommended pad layout with 1oz copper that is on a single-sided 1.6mm FR4 PCB; the device is measured
under still air conditions whilst operating in a steady-state.
Thermal Characteristics – Total Device
0
50
100
150
200
250
0 40 80 120 160 200
P
, P
O
WE
R
DI
SSI
P
A
T
IO
N (
m
W
)
d
T , AMBIENT TEMPERATURE ( C)
Fig. 1, Power Derating Curve (Total Device)
A
°