Diodes BC857AT, BT, CT - Manual

BC857AT, BT, CT
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
•
Epitaxial Die Construction
• Complementary NPN Types Available (BC847AT,BT,CT)
• Ultra-Small Surface Mount Package
•
Lead Free/RoHS Compliant (Note 2)
•
Qualified to AEC-Q101 Standards for High Reliability
• "Green" Device (Note 4 and 5)
Mechanical Data
• Case: SOT-523
•
Case Material - Molded Plastic. UL Flammability
Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020C
•
Terminals: Solderable per MIL-STD-202, Method 208
•
Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
•
Terminal Connections: See Diagram
• Marking Code: See Table Below & Diagram on Page 2
•
Ordering & Date Code Information: See Page 2
•
Weight: 0.002 grams (approximate)
DS30275 Rev. 9 - 2 1 of 3
www.diodes.com
BC857AT, BT, CT
© Diodes Incorporated
Type Marking
BC857AT 3V
BC857BT 3W
BC857CT 3G
SOT-523
Dim Min Max Typ
A 0.15 0.30 0.22
B 0.75 0.85 0.80
C 1.45 1.75 1.60
D ⎯ ⎯ 0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
J 0.00 0.10 0.05
K 0.60 0.80 0.75
L 0.10 0.30 0.22
M 0.10 0.20 0.12
N 0.45 0.65 0.50
α 0
°
8
° ⎯
All Dimensi mm ons in
A
M
J
L D
B C
H
K
Maximum Ratings
@T A = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
-50 V
Collector-Emitter Voltage V
CEO
-45 V
Emitter-Base Voltage V
EBO
-5.0 V
Collector Current I
C
-100 mA
Power Dissipation (Note 1) P
d
150 mW
Thermal Resistance, Junction to Ambient (Note 1) R θJA 833 °C/W
Operating and Storage Temperature Range T
j
, T
STG
-55 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage (Note 3) V (BR)CBO
-50 — — V I C = 10
μA, I
B = 0
Collector-Emitter Breakdown Voltage (Note 3) V (BR)CEO
-45 — — V I C = 10mA, I B = 0
Emitter-Base Breakdown Voltage (Note 3) V
(BR)EBO
-5 — — V I
E
= 1 μA, I
C
= 0
DC Current Gain (Note 3) Current Gain A
B
C
h FE
125
220
420 —
290
520
250
475
800
—
V
CE
= -5.0V, I
C
= -2.0mA
Collector-Emitter Saturation Voltage (Note 3) V
CE(SAT)
—
—
— -300
-650
mV
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
Base-Emitter Saturation Voltage (Note 3) V
BE(SAT)
—
— -700
-900 —
—
mV
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
Base-Emitter Voltage (Note 3) V
BE(ON)
-600
—
—
— -750
-820
mV
V
CE
= -5.0V, I
C
= -2.0mA
V
CE
= -5.0V, I
C
= -10mA
Collector-Cutoff Current (Note 3)
I
CBO
—
— —
— -15
-4.0
NA
µA
V
CB
= -30V
V
CB
= -30V, T
A
= 150°C
Gain Bandwidth Product f
T
100 — — MHz V
CE
= -5.0V, I
C
= -10mA, f = 100MHz
Output Capacitance C
OB
— — 4.5 pF V
CB
= -10V, f = 1.0MHz
Noise Figure NF — — 10 dB
I
C
= -0.2mA, V
CE
= -5.0Vdc,
R
S
= 2.0K Ω, f = 1.0KHz,
BW = 200Hz
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead
3. Short duration pulse test used to minimize self-heating effect.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
G
TOP VIEW
C
E B
N