Absolute maximum ratings, Thermal characteristics, Electrical characteristics – Diodes BC856AW-BC858CW User Manual

Page 2

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BC856AW – BC858CW

Document Number: DS30251 Rev. 10 - 2

2 of 5

www.diodes.com

November 2013

© Diodes Incorporated

BC856AW-BC858CW


Absolute Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Unit

Collector-Base Voltage

BC856

V

CBO

-80

V

BC857 -50
BC858 -30

Collector-Emitter Voltage

BC856

V

CEO

-65

V

BC857 -45
BC858 -30

Emitter-Base Voltage

V

EBO

-5.0 V

Continuous Collector Current

I

C

-100 mA

Peak Collector Current

I

CM

-200 mA

Peak Emitter Current

I

EM

-200 mA




Thermal Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Unit

Power Dissipation

(Note 6)

P

D

200 mW

Thermal Resistance, Junction to Ambient

(Note 6)

R

θJA

625

C/W

Operating and Storage Temperature Range

T

J

, T

STG

-65 to +150

C




Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

Collector-Base Breakdown Voltage

BC856

BV

CBO

-80

-

-

V

I

C

= -100nA

BC857 -50
BC858 -30

Collector-Emitter Breakdown Voltage (Note 7)

BC856

BV

CEO

-65

-

-

V

I

C

= -10mA

BC857 -45
BC858 -30

Emitter-Base Breakdown Voltage

BV

EBO

-5 -

-

V

I

E

= -100nA

DC Current Gain (Note 7)

Current Gain Group

A

h

FE

125 180 250

-

V

CE

= -5.0V, I

C

= -2.0mA

B

220 290 475

C

420 520 800

Collector Cutoff Current

I

CBO

- -

-15 nA

V

CB

= -30V

-4 µA

V

CB

= -30V, T

A

= +150°C

Collector-Emitter Saturation Voltage (Note 7)

V

CE(sat)

-

-75 -300

mV

I

C

= -10mA, I

B

= -0.5mA

-250 -650

I

C

= -100mA, I

B

= -5.0mA

Base-Emitter Turn-On Voltage (Note 7)

V

BE(on)

-600 -650 -750

mV

I

C

= -2mA, V

CE

= -5V

- -

-820 I

C

= -10mA, V

CE

= -5V

Base-Emitter Saturation Voltage (Note 7)

V

BE(sat)

-

-700 -

mV

I

C

= -10mA, I

B

= -0.5mA

-850 -950

I

C

= -100mA, I

B

= -5mA

Output Capacitance

C

obo

- 3 4.5

pF

V

CB

= -10V, f = 1.0MHz

Transition Frequency

f

T

100 200 - MHz

V

CE

= -5V, I

C

= -10mA,

f = 100MHz

Noise Figure

NF

-

-

10

dB

V

CE

= -5V, I

C

= -200µA

R

S

= 2kΩ, f = 1kHz

∆f = 200Hz

Notes:

6. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%




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