Electrical characteristics – Diodes BC856A-BC858C User Manual

Page 4

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BC856A – BC858C

Document Number: DS11207 Rev. 23 - 2

4 of 7

www.diodes.com

December 2013

© Diodes Incorporated

BC856A-BC858C

Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

Collector-Base Breakdown Voltage

BC856

BV

CBO

-80

V

I

C

= -10µA

BC857 -50
BC858 -30

Collector-Emitter Breakdown Voltage
(Note 10)

BC856

BV

CEO

-65

V

I

C

= -10mA

BC857 -45
BC858 -30

Emitter-Base Breakdown Voltage

BV

EBO

-5 —

V

I

E

= -1µA

Collector Cutoff Current

I

CBO

— —

-15 nA

V

CB

= -30V

-4 µA

V

CB

= -30V, T

J

= +150°C

Collector Emitter Cutoff Current

BC856

I

CES

— —

-15

nA

V

CE

= -80V

BC857 -15

V

CE

= -50V

BC858 -15

V

CE

= -30V

Emitter-Base Cutoff Current

I

EBO

— — -100

nA

V

EB

= -5V

Small Signal Current Gain
(Note 10)

BC856A / BC857A / BC858A

h

fe

200

— —

I

C

= -2.0mA, V

CE

= -5V

f = 1.0kHz

BC856B / BC857B / BC858B

330

BC857C / BC858C

600

Input Impedance (Note 10)

BC856A / BC857A / BC858A

h

ie

2.7

— kΩ

BC856B / BC857B / BC858B

4.5

BC857C / BC858C

8.7

Output Admittance
(Note 10)

BC856A / BC857A / BC858A

h

oe

18

— µS

BC856B / BC857B / BC858B

30

BC857C / BC858C

60

Reverse Voltage Transfer
Ratio (Note 10)

BC856A / BC857A / BC858A

h

re

1.5x10

-4

— —

BC856B / BC857B / BC858B

2x10

-4

BC857C / BC858C

3x10

-4

DC Current Gain (Note 10)

BC856A / BC857A / BC858A

h

FE

125 180 250

I

C

= -2.0mA, V

CE

= -5V

BC856B / BC857B / BC858B

220

290

475

BC857C / BC858C

420

520

800

Collector-Emitter Saturation Voltage (Note 10)

V

CE(sat)

-75 -300

mV

I

C

= - 10mA, I

B

= -0.5mA

-250 -650

I

C

= - 100mA, I

B

= -5.0mA

Base-Emitter Turn-On Voltage (Note 10)

V

BE(on)

-600 -650 -750

mV

I

C

= -2mA, V

CE

= -5V

— — -820

I

C

= -10mA, V

CE

= -5V

Base-Emitter Saturation Voltage (Note 10)

V

BE(sat)

-700

— mV

I

C

= -10mA, I

B

= -0.5mA

-850

I

C

= -100mA, I

B

= -5mA

Output Capacitance

C

obo

— 3 — pF

V

CB

= -10V, f = 1.0MHz

Transition Frequency

f

T

100 200 — MHz

V

CE

= -5V, I

C

= -10mA,

f = 100MHz

Noise

Figure

NF — 2 10 dB

V

CE

= -5V, I

C

= -200µA

R

S

= 2kΩ, f = 1kHz

∆f = 200Hz

Notes:

10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%




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