Diodes BC857BFA - Manual (Page 3)

BC857FA
Document number: DS36018 Rev. 1 - 2
3 of 6
www.diodes.com
July 2013
© Diodes Incorporated
BC857BFA
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
-50 -100  V I
C
= -50µA, I
B
= 0
Collector-Emitter Breakdown Voltage BV
CES
-50 -90  I
C
= -50µA, I
B
= 0
Collector-Emitter Breakdown Voltage (Note 8) BV
CEO
-45 -65  V I
C
= -1mA, I
B
= 0
Collector-Base Breakdown Voltage BV
EBO
-6.0 -8.5  V I
E
= -50µA, I
C
= 0
Collector-Base Cutoff Current I
CBO
  -15 nA V
CB
= -40V
Collector-Emitter Cutoff Current I
CES
  -15 nA V
CE
= -40V
ON CHARACTERISTICS (Note 8)
DC Current Gain h
FE
100
200 340
330 
470

I
C
= -10µA, V
CE
= -5.0V
I
C
= -2.0mA, V
CE
= -5.0V
Collector-Emitter Saturation Voltage V
CE(sat)

-70
-300
-175
-500
mV
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
Base-Emitter Saturation Voltage V
BE(sat)

-760
-885 -1000
-1100
mV
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
Base-Emitter Voltage V
BE(on)
-600

-670
-715 -780
-850
mV
I
C
= -2.0mA, V
CE
= -5V
I
C
= -10mA, V
CE
= -5V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
 2.0  pF V
CB
= -10.0V, f = 1.0MHz, I
E
= 0
Current Gain-Bandwidth Product f
T
100 340  MHz
V
CE
= -5V, I
C
= -10mA,
f = 100MHz
Note: 8. Measured under pulsed conditions. Pulse width  300µs. Duty cycle  2%.