Diodes BC857BV - Manual

BC857BV
Document number: DS30433 Rev. 5 - 2
1 of 4
www.diodes.com
April 2009
© Diodes Incorporated
BC857BV
PNP DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
•
Epitaxial Die Construction
• Complementary PNP Type Available (BC847BV)
•
Ultra-Small Surface Mount Package
•
Lead Free By Design/RoHS Compliant (Note 3)
• "Green" Device (Notes 5 and 6)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case:
SOT-563
• Case Material: Molded Plastic, “Green” Molding Compound,
Note 6. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
•
Terminal Connections: See Diagram
•
Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
•
Marking Information: See Page 2
•
Ordering Information: See Page 2
• Weight: 0.003 grams (approximate)
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
-50 V
Collector-Emitter Voltage V
CEO
-45 V
Emitter-Base Voltage V EBO
-5.0 V
Collector Current I
C
-100 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 2) P
D
150 mW
Thermal Resistance, Junction to Ambient (Note 2) R θJA 833 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage (Note 4) V
(BR)CBO
-50 — — V I
C
= 10
μA, I
B
= 0
Collector-Emitter Breakdown Voltage (Note 4) V
(BR)CEO
-45 — — V I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage (Note 4) V
(BR)EBO
-5 — — V I
E
= 1 μA, I
C
= 0
DC Current Gain (Note 4) h
FE
220 290 475 — V
CE
= -5.0V, I
C
= -2.0mA
Collector-Emitter Saturation Voltage (Note 4) V
CE(SAT)
—
—
— -100
-400
mV
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
Base-Emitter Saturation Voltage (Note 4) V
BE(SAT)
—
— -700
-900 —
—
mV
I
C
= -10mA, I
B
= -0.5mA
I C = -100mA, I B = -5.0mA
Base-Emitter Voltage (Note 4) V
BE(ON)
-600
—
—
— -750
-820
mV
V
CE
= -5.0V, I
C
= -2.0mA
V
CE
= -5.0V, I
C
= -10mA
Collector-Cutoff Current (Note 4) I
CBO
—
— —
— -15
-4.0
nA
µA V
CB
= -30V
V
CB
= -30V, T
A
= 150°C
Gain Bandwidth Product f
T
100 — — MHz V
CE
= -5.0V, I
C
= -10mA, f = 100MHz
Output Capacitance C
OB
— — 4.5 pF V
CB
= -10V, f = 1.0MHz
Noise Figure NF — — 10 dB
I
C
= -0.2mA, V
CE
= -5.0Vdc,
R
S
= 2.0K Ω, f = 1.0KHz, BW = 200Hz
Notes: 1. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. No purposefully added lead.
4. Short duration pulse test used to minimize self-heating effect.
5. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
6. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
Top View Bottom View Device Schematic (Note 1)
C
1
B
2
E
2
C
2
E
1
B
1
Please click here to visit our online spice models database.