Diodes BCW66H - Manual (Page 2)

BCW66H
Document number: DS33003 Rev. 5 - 2
2 of 5
www.diodes.com
April 2013
© Diodes Incorporated
BCW66H
A Product Line of
Diodes Incorporated
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
75 V
Collector-Emitter Voltage V
CEO
45 V
Emitter-Base Voltage V
EBO
7 V
Continuous Collector Current I
C
800 mA
Peak Pulse Current I
CM
1000 mA
Base Current I
B
100 mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation
(Note 6)
P
D
310
mW
(Note 7) 350
Thermal Resistance, Junction to Ambient
(Note 6)
R
θJA
403
C/W
(Note 7) 357
Thermal Resistance, Junction to Leads (Note 8) R
θJL
350 C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 C
Notes: 6. For a device mounted on minimum recommended pad layout 1oz weight copper that is on a single-sided FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
7. Same as Note 6, except the device is mounted on 15mm X 15mm 1oz copper.
8. Thermal resistance from junction to solder-point (at the end of the leads).
0 25 50 75 100 125 150
0.0
0.1
0.2
0.3
0.4
Derating Curve
Temperature (°C)
M
ax P
ower Di
ssi
pat
io
n
(W)
100µ 1m 10m 100m 1 10 100 1k
0
50
100
150
200
250
300
350
400
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
T
h
er
m
al Re
si
st
an
ce
(
°C
/W)
Pulse Width (s)
10m 100m 1 10 100 1k
0.1
1
10
Single Pulse. T
amb
=25°C
Pulse Power Dissipation
Pulse Width (s)
M
ax P
ower Di
ssi
pat
io
n
(W)