Diodes BCW68H - Manual (Page 2)

BCW68H
Document number: DS33004 Rev. 6 - 2
2 of 5
www.diodes.com
December 2012
© Diodes Incorporated
BCW68H
A Product Line of
Diodes Incorporated
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage V
CES
-60 V
Collector-Emitter Voltage V
CEO
-45 V
Emitter-Base Voltage V
EBO
-7 V
Continuous Collector Current I
C
-800 mA
Peak Pulse Current I
CM
-1000 mA
Base Current I
B
-100 mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation
(Note 5)
P
D
310
mW
(Note 6) 350
Thermal Resistance, Junction to Ambient
(Note 5)
R
θJA
403
°C/W
(Note 6) 357
Thermal Resistance, Junction to Leads (Note 7) R
θJL
350 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Notes: 5. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper in still air condition; the device is
measured when operating in a steady-state condition.
6. Same as note (5), except the device is mounted on 15mm x 15mm FR4 PCB.
7. Thermal resistance from junction to solder-point (at the end of the leads).
0 25 50 75 100 125 150
0.0
0.1
0.2
0.3
0.4
Derating Curve
Temperature (°C)
M
ax P
ower Di
ssi
pat
io
n
(W)
100µ 1m 10m 100m 1 10 100 1k
0
50
100
150
200
250
300
350
400
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
T
h
er
m
al Re
si
st
an
ce
(
°C
/W)
Pulse Width (s)
10m 100m 1 10 100 1k
0.1
1
10
Single Pulse. T
amb
=25°C
Pulse Power Dissipation
Pulse Width (s)
M
ax P
ower Di
ssi
pat
io
n
(W)