Electrical characteristics–q1 npn, Electrical characteristics–q2 pnp – Diodes DC0150BDJ User Manual

Page 2

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DC0150ADJ / DC0150BDJ

Document number: DS31480 Rev. 3 - 2

2 of 6

www.diodes.com

April 2009

© Diodes Incorporated

DC0150ADJ / DC0150BDJ

NEW PROD

UC

T




Electrical Characteristics–Q1 NPN

@T

A

= 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage

V(

BR)CBO

60 — — V

I

C

= 10

μA, I

E

= 0

Collector-Emitter Breakdown Voltage

V(

BR)CEO

50 — — V

I

C

= 1mA, I

B

= 0

Emitter-Base Breakdown Voltage

V(

BR)EBO

5 — — V

I

E

= 10

μA, I

C

= 0

Collector Cut-Off Current

I

CBO

— — 0.1

μA

V

CB

= 60V, I

E

= 0

Emitter Cut-Off Current

I

EBO

— — 0.1

μA

V

EB

= 5V, I

C

= 0

ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage

V

CE(SAT)

— 0.10

0.25 V

I

C

= 100mA, I

B

= 10mA

DC Current Gain DC0150ADJ
DC0150BDJ

h

FE

120 — 240

V

CE

= 6V, I

C

= 2mA

200 — 400

SMALL SIGNAL CHARACTERISTICS

Transition Frequency

f

T

60 — —

MHz

V

CE

= 10V, I

E

= -1mA

f = 30MHz

Output Capactiance

C

ob

— 1.3 — pF

V

CB

= 10V, I

E

= 0,

f = 1MHz

Electrical Characteristics–Q2 PNP

@T

A

= 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage

V(

BR)CBO

-50 — — V

I

C

= -10

μA, I

E

= 0

Collector-Emitter Breakdown Voltage

V(

BR)CEO

-50 — — V

I

C

= -1mA, I

B

= 0

Emitter-Base Breakdown Voltage

V(

BR)EBO

-5 — — V

I

E

= -10

μA, I

C

= 0

Collector Cut-Off Current

I

CBO

— — -0.1

μA

V

CB

= -50V, I

E

= 0

Emitter Cut-Off Current

I

EBO

— — -0.1

μA

V

EB

= -5V, I

C

= 0

ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage

V

CE(SAT)

— -0.15 -0.3 V

I

C

= -100mA, I

B

= -10mA

DC Current Gain DC0150ADJ
DC0150BDJ

h

FE

120 — 240

V

CE

= -6V, I

C

= -2mA

200 — 400

SMALL SIGNAL CHARACTERISTICS

Transition Frequency

f

T

80 — —

MHz

V

CE

= -10V, I

E

= 1mA

f = 30MHz

Output Capactiance

C

ob

— 1.6 — pF

V

CB

= -10V, I

E

= 0,

f = 1MHz

Notes:

4. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle

≤2%



0

0

P

, PO

W

E

R DIS

S

IP

A

T

IO

N (

W

)

D

T , AMBIENT TEMPERATURE ( C)

A

°

Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)

50

100

150

200

250

25

50

75

100

125

150

300

R

= 417°C/W

θJA

1

10

100

1,000

0.1

1

10

100

-V

, COLLECTOR-EMITTER VOLTAGE (V)

CE

Fig. 2 Typical Collector Current

vs. Collector-Emitter Voltage (Note 3)

-I

,

C

O

LL

E

C

T

O

R

C

U

R

R

EN

T

(mA

)

C

Pw = 100ms

Pw = 10ms

DC

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