Diodes BC846BLP4 - Manual (Page 4)

BC846BLP4
Document number: DS35751 Rev. 2 - 2
4 of 7
www.diodes.com
July 2012
© Diodes Incorporated
BC846BLP4
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
80 ⎯ ⎯ V I
C
= 100µA, I
E
= 0
Collector-Emitter Breakdown Voltage (Note 9) BV
CEO
65 ⎯ ⎯ V I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage BV
EBO
6 ⎯ ⎯ V I
E
= 100µA, I
C
= 0
Collector Cutoff Current I CES
⎯ ⎯ 15 nA V CE = 65V
Collector Cutoff Current I
CBO
⎯ ⎯
15
5.0
nA
µA V
CB
= 40V
V
CB
= 30V, T
A
= +150°C
ON CHARACTERISTICS (Note 9)
DC Current Gain
h
FE
200 270 450 ⎯
V
CE
= 5V, I
C
= 2.0mA
Collector-Emitter Saturation Voltage V
CE(sat)
⎯
90
220
250
600
mV
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
Base-Emitter Saturation Voltage V BE(sat)
⎯
720
870 900
⎯
mV
I C = 10mA, I B = 0.5mA
I
C
= 100mA, I
B
= 5.0mA
Base-Emitter Voltage V
BE(on)
580
⎯
650
⎯
700
770
mV
V
CE
= 5V, I
C
= 2.0mA
V
CE
= 5V, I
C
= 10mA
SMALL SIGNAL CHARACTERISTICS (Note 9)
Input Capacitance
C
ibo
⎯ 6.7 ⎯ pF V
CB
= 5V, f = 1.0MHz
Output Capacitance C
obo
⎯ 1.76 ⎯ pF V
CB
= 10V, f = 1.0MHz
Current Gain-Bandwidth Product f T
100 300 ⎯ MHz V CE = 5V, I C = 10mA, f = 100MHz
Noise Figure NF ⎯ 2 10 dB
V
CE
= 5V, I
C
= 200µA, R
S
= 2.0k Ω,
f = 1.0kHz, Δf = 200Hz
Delay time t d
⎯ 11.2 ⎯ ns
V
CC
= 30V,
I
C
= 150mA,
I B1 = I B2 = 15mA
Rise time t
r
⎯ 59.7 ⎯ ns
Storage time t
s
⎯ 190.8 ⎯ ns
Fall time t
f
⎯ 108.6 ⎯ ns
Note: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.