Diodes BCP5616Q - Manual (Page 4)

BCP5616Q
Datasheet Number: DS36981 Rev.1 - 2
4 of 7
www.diodes.com
March 2014
© Diodes Incorporated
BCP5616Q
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
100 - - V I
C
= 100µA
Collector-Emitter Breakdown Voltage (Note 9) BV
CEO
80 - - V I
C
= 10mA
Emitter-Base Breakdown Voltage BV
EBO
5 - - V I
E
= 10µA
Collector Cut-off Current I
CBO
- -
0.1
20
µA
V
CB
= 30V
V
CB
= 30V, T
A
= +150°C
Emitter Cut-off Current I
EBO
- - 20 nA V
EB
= 4V
Static Forward Current Transfer Ratio (Note 9) h
FE
25
100
25
-
-
- -
250
-
-
I
C
= 5mA, V
CE
= 2V
I
C
= 150mA, V
CE
= 2V
I
C
= 500mA, V
CE
= 2V
Collector-Emitter Saturation Voltage (Note 9) V
CE(sat)
- - 0.5 V I
C
= 500mA, I
B
= 50mA
Base-Emitter Turn-On Voltage (Note 9) V
BE(on)
- - 1.0 V I
C
= 500mA, V
CE
= 2V
Transition Frequency f
T
150 - - MHz
I
C
= 50mA, V
CE
= 10V
f = 100MHz
Output Capacitance C obo - - 25 pF V
CB
= 10V, f = 1MHz
Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
0
0.2
0.4
0.6
0.8
0 1 2 3 4 5
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
I,
C
O
LL
E
C
T
O
R
C
U
R
R
E
N
T
(A
)
C
Fig. 1 Typical Collector Current
vs. Collector-Emitter Voltage
h
, DC CURR
ENT
GAIN
FE
Fig. 2 Typical DC Current Gain vs. Collector Current
0
50
100
150
200
250
0.001 0.01 0.1 1 10
I , COLLECTOR CURRENT (A)
C