Electrical characteristics – Diodes 2DA1971 User Manual
Page 4
2DA1971
Document number: DS35669 Rev: 2 – 2
4 of 7
August 2012
© Diodes Incorporated
2DA1971
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
Collector-Base Breakdown Voltage
BV
CBO
-400 - -
V
I
C
= -100µA
Collector-Emitter Breakdown Voltage (Note 8)
BV
CEO
-400 - -
V
I
C
= -1mA
Emitter-Base Breakdown Voltage
BV
EBO
-7 - - V
I
E
= -100µA
Collector-Emitter Cut-off Current
I
CES
- -
-100
nA
V
CE
= -320V
Collector Cut-off Current
I
CBO
- -
-100
nA
V
CB
= -320V
Emitter Cut-off Current
I
EBO
- -
-100
nA
V
EB
= -6V
Static Forward Current Transfer Ratio (Note 8)
h
FE
140
140
-
450
400
-
I
C
= -20mA, V
CE
= -5V
I
C
= -100mA, V
CE
= -5V
Collector-Emitter saturation Voltage (Note 8)
V
CE(sat)
- -
-250
mV
I
C
= -100mA, I
B
= -10mA
-400
I
C
= -200mA, I
B
= -40mA
Base-Emitter saturation Voltage (Note 8)
V
BE(sat)
- -0.75
-0.9 V I
C
= -100mA, I
B
= -10mA
Base-Emitter Turn-On Current (Note 8)
V
BE(on)
- -
-0.8 V
I
C
= -200mA, V
CE
= -10V
Transition frequency
f
T
- 75 - MHz
I
C
= -50mA, V
CE
= -5V,
f = 50MHz
Collector Output Capacitance
C
obo
- 19 - pF
V
CB
= -10V, I
E
= 0, f = 1MHz
Delay Time
t
(d)
- 89 - ns
V
CC
= -200V, I
C
= -100mA,
I
B1
= -10mA, I
B2
= 20mA
Rise Time
t
(r)
- 111 - ns
Storage Time
t
(s)
- 2165 -
ns
Fall Time
t
(f)
- 185 - ns
Notes:
8. Measured under pulsed conditions. Pulse width
≤ 300µs. Duty cycle ≤ 2%