Diodes BST39 - Manual

SOT89 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 4 – JUNE 1996 ✪
FEATURES
*
Fast Switching
* High h
FE
.
COMPLEMENTARY TYPE – BST16
PARTMAKING DETAIL – AT1
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
400 V
Collector-Emitter Voltage V
CEO
350 V
Emitter-Base Voltage V
EBO
5 V
Peak Pulse Current I
CM
1 A
Continuous Collector Current I
C
500 mA
Power Dissipation at T
amb
=25°C P
tot
1 W
Operating and Storage Temperature Range T
j
:T
stg
-65 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage V
(BR)CBO
400 V I
C
=10 µ A
Collector-Emitter
Breakdown Voltage V
(BR)CEO
350 V I
C
=1mA*
Emitter-Base
Breakdown Voltage V
(BR)EBO
5 V I
E
=10 µ A
Collector Cut-Off Current I
CBO
20 nA V
CB
=300V
Collector-Emitter
Saturation Voltage V
CE(sat)
0.5 V I
C
=50mA, I
B
=4mA
Base-Emitter
Saturation Voltage V
BE(sat)
1.3 V I
C
=50mA, I
B
=4mA
Static Forward Current
Transfer Ratio h
FE
40 I
C
=20mA, V
CE
=10V*
Output Capacitance C
obo
2 pF V
CB
=10V, f=1MHz
Input Capacitance C
ibo
20 pF V
EB
=10V, f=1MHz
Transition Frequency f
T
70 MHz I
C
=10mA, V
CE
=10V,
f=5MHz
* Measured under pulsed conditions. Pulse width=300 µ s. Duty cycle ≤ 2%
For typical characteristics graphs see FMMT458 datasheet.
BST39
C
C
B
E
SOT89
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