Diodes DDC144TU - Manual (Page 2)

DS30767 Rev. 7 - 2 2 of 6
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DDC144TU
© Diodes Incorporated
NEW PROD
UC
T
Maximum Ratings:
Sub-Component Device: Discrete NPN Transistor (Q1, Q2)
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
50 V
Collector-Emitter Voltage V
CEO
50 V
Emitter-Base Voltage V
EBO
6 V
Collector Current (dc) I
C(max)
50 mA
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Off Characteristics
Collector-Base Cut Off Current
I
CBO
⎯ ⎯ 100 nA V
CB
= 50V, I
E
= 0
Collector-Emitter Cut Off Current, I
O(OFF)
I
CEO
⎯ ⎯ 500 nA V
CE
= 50V, I
B
= 0
Emitter-Base Cut Off Current I
EBO
⎯ ⎯ 500 nA V
EB
= 5V, I
C
= 0
Collector-Base Breakdown Voltage V
(BR)CBO
50 ⎯ ⎯ V I
C
= 50uA, I
E
= 0
Collector-Emitter Breakdown Voltage V
(BR)CEO
50 ⎯ ⎯ V I
C
= 1 mA, I
B
= 0
Emitter-Base Breakdown Voltage V
(BR)EBO
6 ⎯ ⎯ V I
E
= 50uA, I
C
= 0
Output Voltage (Transistor is off) V
OH
4.6 4.45 ⎯ V V
CC
= 5V, V
B
= 0.05V, R
L
= 1K
Ω
Input Voltage (load is off) V
I(OFF)
⎯ 0.6 0.4 ⎯
V
CE
= 5V, I
C
= 100uA
Output Current (leakage same as I
CEO
) I
O(OFF)
⎯ ⎯ 850 nA V
CC
= 50V, V
I
= 0V
On Characteristics*
⎯ 0.03 0.1 V I
C
= 2.5 mA, I
B
= 0.25 mA
⎯ 0.075 0.1 V I
C
= 10mA, I
B
= 0.5mA
⎯ 0.05 0.1 V I
C
= 10mA, I
B
= 1mA
Collector-Emitter Saturation Voltage V
CE(SAT)
⎯ 0.2 0.3 V I
C
= 50mA, I
B
= 5mA
150 400 ⎯ ⎯
V
CE
= 5V, I
C
= 1 mA
150 400 ⎯ ⎯
V
CE
= 5V, I
C
= 10 mA
150 350 ⎯ ⎯
V
CE
= 5V, I
C
= 25 mA
150 300 ⎯ ⎯
V
CE
= 5V, I
C
= 50 mA
DC Current Gain h
FE
50 110 ⎯ ⎯
V
CE
= 5V, I
C
= 100 mA
Output Voltage (equivalent to V
CE(SAT)
or V
O(on)
) V
OL
⎯ 0.2 0.25 Vdc V
CC
= 5V, V
B
= 2.5V, R
L
=10K Ω
Input Voltage V
I(ON)
1.5 0.95 ⎯ Vdc V
O
= 0.3V, I
C
= 2mA
Input Current I
i
⎯ 19.2 28 mA V
I
= 5V
Base-Emitter Turn-on Voltage V
BE(ON)
⎯ ⎯ 1.2 V V
CE
= 5V, I
C
= 2mA
Base-Emitter Saturation Voltage V
BE(SAT)
⎯ ⎯ 1.6 V I
C
= 200uA, I
B
= 20uA
Input Resistor +/- 30% (Base) R1 ⎯ 47 ⎯ K
Ω ⎯
Small Signal Characteristics
Transition Frequency (gain-bandwidth product)
f
T
⎯ 250 ⎯ MHz V
CE
= 10V, I
E
= 5mA, f =100MHz
Collector Capacitance, (Ccbo-Output Capacitance) C
C
⎯ ⎯ 5 pF V
CB
= 10V, I
E
= 0, f = 1MHz
*Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d<=0.02