Diodes BCV49 - Manual

SOT89 NPN SILICON PLANAR
DARLINGTON TRANSISTOR
ISSUE 3 – SEPTEMBER 1995
COMPLEMENTARY TYPE – BCV48
PARTMARKING DETAILS – EG
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
80 V
Collector-Emitter Voltage V
CEO
60 V
Emitter-Base Voltage V
EBO
10 V
Peak Pulse Current I
CM
800 mA
Continuous Collector Current I
C
500 mA
Power Dissipation at T
amb
=25°C P
tot
1 W
Operating and Storage Temperature
Range T j :T stg -65 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage V
(BR)CBO
80 V I
C
=100 µ A
Collector-Emitter
Breakdown Voltage V (BR)CEO 60 V I C =10mA*
Emitter-Base
Breakdown Voltage V (BR)EBO 10 V I
E
=10 µ A
Collector Cut-Off
Current I CBO 100
10 nA
µ A
V CB =60V
V
CB
=60V, T
amb
=150°C
Emitter Cut-Off Current I
EBO
100 nA V
EB
=4V
Collector-Emitter
Saturation Voltage V
CE(sat)
1 V I
C
=100mA, I
B
=0.1mA*
Base-Emitter
Saturation Voltage V
BE(sat)
1.5 V I
C
=100mA, I
B
=0.1mA*
Static Forward Current
Transfer Ratio h FE 2000
4000
10000
2000 I
C
=100 µ A, V
CE
=1V†
I
C
=10mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
Transition Frequency f
T
170 MHz I
C
=50mA, V
CE
=5V
f = 20MHz
Output Capacitance C
obo
3.5 pF V
CB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300 µ s. Duty cycle ≤ 2%
For typical graphs see FMMT38A datasheet † Periodic Sample Test Only.
Spice parameter data is available upon request for this device
BCV49
C
C
B
E
SOT89
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