Diodes 2N7002DW - Manual (Page 2)

2N7002DW
Document number: DS30120 Rev. 16 - 2
2 of 5
www.diodes.com
November 2013
© Diodes Incorporated
2N7002DW
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
60 V
Drain-Gate Voltage R
GS
≤ 1.0MΩ V
DGR
60 V
Gate-Source Voltage
Continuous V
GSS
±20 V
Pulsed V
GSS
±40 V
Continuous Drain Current (Note 7) V
GS
= 5V
Steady
State
T
A
= +25 °C
T
A
= +70 °C
T
A
= +100 °C
I
D
0.23
0.18
0.14
A
Maximum Continuous Body Diode Forward Current (Note 7) I
S
0.53 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) I
DM
0.8 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
0.31
W T
A
= +70°C 0.2
T
A
= +100°C 0.12
Thermal Resistance, Junction to Ambient (Note 6) Steady state R
θJA
410 °C/W
Total Power Dissipation (Note 7)
T
A
= +25°C
P
D
0.4
W T
A
= +70°C 0.25
T
A
= +100°C 0.15
Thermal Resistance, Junction to Ambient (Note 7) Steady state R
θJA
318 °C/W
Thermal Resistance, Junction to Case (Note 7) Steady state R
θJC
135 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
60 70 ⎯ V V
GS
= 0V, I
D
= 10µA
Zero Gate Voltage Drain Current @ T
C
= +25°C
@ T
C
= +125°C
I
DSS
⎯ ⎯
1.0
500
µA V
DS
= 60V, V
GS
= 0V
Gate-Body Leakage I
GSS
⎯ ⎯ ±10 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
1.0 ⎯ 2.0 V V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance @ T
J
= +25°C
@ T
J
= +125°C
R
DS (ON)
⎯
3.2
4.4 7.5
13.5
Ω
V
GS
= 5.0V, I
D
= 0.05A
V
GS
= 10V, I
D
= 0.5A
On-State Drain Current I
D(ON)
0.5 1.0 ⎯ A V
GS
= 10V, V
DS
= 7.5V
Forward Transconductance g
FS
80 ⎯ ⎯ mS V
DS
=10V, I
D
= 0.2A
Diode Forward Voltage V
SD
⎯ 0.78 1.5 V V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
⎯ 22 50 pF
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
⎯ 11 25 pF
Reverse Transfer Capacitance C
rss
⎯ 2.0 5.0 pF
SWITCHING CHARACTERISTICS (Note 9)
Turn-On Delay Time
t
D(on)
⎯ 7.0 20
ns
V
DD
= 30V, I
D
= 0.2A,
R
L
= 150 Ω, V
GEN
= 10V,
R
GEN
= 25 Ω
Turn-Off Delay Time t
D(off)
⎯ 11.0 20
Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.