Diodes 2N7002T - Manual (Page 3)

2N7002T
Document number: DS30301 Rev. 14 - 2
3 of 5
www.diodes.com
April 2012
© Diodes Incorporated
2N7002T
0 1 2 3 4 5
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
DS
0.2
0.1
0.4
0.3
0.5
0.6
0.7
0.8
0.9
I,
D
R
AI
N
-S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
D
1.0
0
V = 2.5V
GS
V = 3.0V
GS
V = 4.0V
GS
V = 5.0V
GS
V = 6.0V
GS
V = 7.0V
GS
V = 10V
GS
1
2
3
4
5
0 0.2
I , DRAIN-SOURCE CURRENT (A)
Fig. 2 On-Resistance Variation with Gate Voltage
and Drain-Source Current
D
0.4 0.6 0.8 1.0
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ESI
S
T
A
N
C
E
DS
(O
N)
()Ω
V = 3.0V
GS
V = 4.0V
GS
V = .0V
GS
6 V = .0V
GS
7
V = V
GS
10
V = 5.0V
GS
0.5
1.5
2.5
0
1.0
2.0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Fig. 3 Gate Threshold Variation with Temperature
J
°
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E (
V
)
GS
(t
h
)
I = 250µA
D
0.5
1.5
2.5
R
D
R
AI
N
-S
O
U
R
C
E
O
N
-RESIS
T
ANCE (
NORM
A
L
IZ
E
D)
DS
(O
N)
,
0
1.0
2.0
3.0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Fig. 4 On-Resistance Variation with Temperature
J
°
V = 10V
I = 500mA
GS
D
0 5 10 15 20 25 30
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 5 Typical Capacitance
DS
0
10
20
30
50
40
60
C
,
C
A
P
A
C
IT
A
N
C
E (
p
F
)
C
iss
C
oss
C
rss
f = 1MHz
0 2 4 6 8 10
V , GATE-SOURCE VOLTAGE (V)
Fig. 6 On-Resistance vs. Gate-Source Voltage
GS
0
0.5
2.0
3.0
2.5
4.5
4.0
3.5
5.0
R
D
R
AI
N-
S
O
U
R
C
E
O
N-
R
ESI
S
T
AN
C
E
DS
(O
N)
,
()Ω
1.5
1.0
I = 50mA
D