Diodes 2N7002K - Manual (Page 2)

2N7002K
Document number: DS30896 Rev. 14 - 2
2 of 6
www.diodes.com
August 2013
© Diodes Incorporated
2N7002K
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V DSS
60 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
380
300
mA
t<5s
T
A
= +25°C
T
A
= +70°C
I
D
430
340
mA
Continuous Drain Current (Note 6) V
GS
= 5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
310
240
mA
t<5s
T
A
= +25°C
T A = +70°C
I D
350
270
mA
Maximum Continuous Body Diode Forward Current (Note 6) I
S
0.5 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) (Note 6) I
DM
1.2 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) P
D
370 mW
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R θJA
357
°C/W
t<5s 292
Total Power Dissipation (Note 6) P
D
540 mW
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
R θJA
240
°C/W t<5s 197
Thermal Resistance, Junction to Case (Note 6 ) R θJC 91
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
60 — — V V
GS
= 0V, I
D
= 10µA
Zero Gate Voltage Drain Current I
DSS
— — 1.0 µA V
DS
= 60V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±10 µA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1.0 1.6 2.5 V V
DS
= 10V, I
D
= 1mA
Static Drain-Source On-Resistance R
DS(ON)
—
—
— 2.0
3.0
Ω
V
GS
= 10V, I
D
= 0.5A
V GS = 5V, I D = 0.05A
Forward Transfer Admittance |Y
fs
| 80 — — ms V
DS
=10V, I
D
= 0.2A
Diode Forward Voltage V
SD
— 0.75 1.1 V V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
— 30 50 pF
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
— 4.2 25 pF
Reverse Transfer Capacitance C
rss
— 2.9 5.0 pF
Gate Resistance R
g
— 133 — Ω f = 1MHz , V
GS
= 0V, V
DS
= 0V
Total Gate Charge Q
g
— 0.3 — nC
V GS = 4.5V, V DS = 10V,
I D = 250mA
Gate-Source Charge Q gs
— 0.2 — nC
Gate-Drain Charge Q
gd
— 0.08 — nC
Turn-On Delay Time t
D(on)
— 3.9 — ns
V
DD
= 30V, V
GS
= 10V,
R
G
= 25 Ω, I
D
= 200mA
Turn-On Rise Time t r
— 3.4 — ns
Turn-Off Delay Time t
D(off)
— 15.7 — ns
Turn-Off Fall Time t
f
— 9.9 — ns
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.