Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes 2N7002W User Manual

Page 2

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2N7002W

Document number: DS30099 Rev. 14 - 2

2 of 4

www.diodes.com

September 2013

© Diodes Incorporated

2N7002W



Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

V

DSS

60

V

Drain-Gate Voltage R

GS

 1.0M

V

DGR

60

V

Gain-Source Voltage Continuous
Pulsed

V

GSS

20
40

V

Drain Current (Note 5) Continuous
Continuous @ +100

C

Pulsed

I

D

115

73

800

mA




Thermal Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)
Derating above T

A

= +25°C

P

D

200

1.60

mW
mW

Thermal Resistance, Junction to Ambient

R

JA

625

C/W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150

C


Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage

BV

DSS

60 70

V

V

GS

= 0V, I

D

= 10

A

Zero Gate Voltage Drain Current

@ T

C

= +25°C

@ T

C

= +125°C

I

DSS

1.0

500

A

V

DS

= 60V, V

GS

= 0V

Gate-Body Leakage

I

GSS

10

nA

V

GS

=

20V, V

DS

= 0V

ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage

V

GS(th)

1.0

2.0

V

V

DS

= V

GS

, I

D

= 250

A

Static Drain-Source On-Resistance @ T

J

= +25°C

@ T

j

= +125°C

R

DS(ON)



1.8
2.6

7.5

13.5

V

GS

= 5.0V, I

D

= 0.05A

V

GS

= 10V, I

D

= 0.5A

On-State Drain Current

I

D(ON)

0.5

1.0

A

V

GS

= 10V, V

DS

= 7.5V

Forward Transconductance

g

FS

80

mS V

DS

= 10V, I

D

= 0.2A

DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance

C

iss

22

50

pF

V

DS

= 25V, V

GS

= 0V

f = 1.0MHz

Output Capacitance

C

oss

11

25

pF

Reverse Transfer Capacitance

C

rss

2.0

5.0

pF

SWITCHING CHARACTERISTICS (Note 7)
Turn-On Delay Time

t

D(ON)

7.0

20

ns

V

DD

= 30V, I

D

= 0.2A,

R

L

= 150Ω,

V

GEN

= 10V,

R

GEN

= 25Ω

Turn-Off Delay Time

t

D(OFF)

11

20

ns

Notes:

5. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our

website at http://www.diodes.com/datasheets/ap02001.pdf.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to production testing.

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