Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes BSS138 User Manual

Page 2: Bss138

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BSS138

Document number: DS30144 Rev. 20 - 2

2 of 5

www.diodes.com

November 2013

© Diodes Incorporated

BSS138



Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Units

Drain-Source Voltage

V

DSS

50 V

Drain-Gate Voltage R

GS

≤ 20KΩ

V

DGR

50 V

Gate-Source Voltage

Continuous

V

GSS

±20

V

Gate-Source Voltage

Non repetitive, Pulse width<50

μs

±40

V

Drain Current

Continuous

I

D

200 mA

Pulsed Drain Current (

10μs pulse duty cycle = 1%)

I

DM

1 A


Thermal Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Units

Power Dissipation (Note 5)

P

D

300 mW

Thermal Resistance, Junction to Ambient (Note 5)

R

θJA

417

°C/W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150

°C


Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage

BV

DSS

50 75

V

V

GS

= 0V, I

D

= 250

μA

Zero Gate Voltage Drain Current

I

DSS

0.5 µA

V

DS

= 50V, V

GS

= 0V

Gate-Body Leakage

I

GSS

±100

nA V

GS

=

±20V, V

DS

= 0V

ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage

V

GS(th)

0.5 1.2 1.5 V V

DS

= V

GS

, I

D

= 250

μA

Static Drain-Source On-Resistance

R

DS (ON)

1.4 3.5

Ω

V

GS

= 10V, I

D

= 0.22A

Forward Transconductance

g

FS

100

mS V

DS

= 25V, I

D

= 0.2A, f = 1.0KHz

DYNAMIC CHARACTERISTICS
Input Capacitance

C

iss

50 pF

V

DS

= 10V, V

GS

= 0V, f = 1.0MHz

Output Capacitance

C

oss

25 pF

Reverse Transfer Capacitance

C

rss

8.0 pF

SWITCHING CHARACTERISTICS
Turn-On Delay Time

t

D(ON)

20 ns

V

DD

= 30V, I

D

= 0.2A, R

GEN

= 50

Ω

Turn-Off Delay Time

t

D(OFF)

20 ns

Notes:

5. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our
website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.


0

0.1

0.2

0.3

0.4

0.5

0.6

0

10

9

1

2

3

4

5

6

7

8

I,

D

R

AI

N-

S

O

U

R

C

E

C

U

R

R

EN

T

(A

)

D

V , DRAIN-SOURCE VOLTAGE (V)

Fig. 1 Drain-Source Current vs. Drain-Source Voltage

DS

T = 25 C

j

°

V

= 3.5V

GS

V

= 3.25V

GS

V

= 3.0V

GS

V

= 2.75V

GS

V

= 2.5V

GS

0

V , GATE-SOURCE VOLTAGE (V)

Fig. 2 Transfer Characteristics

GS

0.1

0.2

0.3

0.5

0.4

0.6

0.7

0.8

0

1

1.5

0.5

2

3.5 4

4.5

2.5

3

I,

D

R

AI

N

-S

O

U

R

C

E

C

U

R

R

E

N

T

(A

)

D

-55 C

°

150 C

°

25 C

°

V = 1V

DS

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