Diodes BS107P User Manual
Bs107p, N-channel enhancement mode vertical dmos fet, Absolute maximum ratings
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – SEPT 93
FEATURES
*
200 Volt V
DS
*
R
DS(on)
=23
Ω
REFER TO BS107PT FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
200
V
Continuous Drain Current at T
amb
=25°C
I
D
0.12
A
Pulsed Drain Current
I
DM
2
A
Gate-Source Voltage
V
GS
±
20
V
Power Dissipation at T
amb
=25°C
P
tot
500
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Drain-Source
Breakdown Voltage
BV
DSS
200
230
V
I
D
=100
µ
A, V
GS
=0V
Gate Body Leakage
I
GSS
10
nA
VGS=15V, V
DS
=0V
Drain Cut-Off Current
I
DSS
30
nA
V
GS
=0V, V
DS
=130V
Drain Cut-Off Current
I
DSX
1
µ
A
V
GS
=0.2V, V
DS
=70V
Static Drain-Source
on-State Resistance
R
DS(on)
15
23
30
Ω
Ω
V
GS
=2.6V, I
D
=25mA*
V
GS
=5V, I
D
=100mA*
* Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
BS107P
3-23
D
G
S
E-Line
TO92 Compatible