Diodes BSS123 User Manual
Page 3
BSS123
Document number: DS30366 Rev. 18 - 2
3 of 5
August 2013
© Diodes Incorporated
BSS123
ADVAN
CE I
N
F
O
RM
ATI
O
N
0
0.2
0.7
0
1
3
4
5
I,
D
R
AIN
-S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
D
V
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
DS
2
0.6
0.5
0.1
0.3
0.4
0.8
1.2
1.6
0.1
0.2
R
, N
O
R
MA
L
IZ
E
D
DRA
IN-
S
OURC
E ON-
RE
S
IST
A
N
CE
DS
(O
N)
I , DRAIN-SOURCE CURRENT (A)
Fig. 2 On-Resistance Variation with Gate Voltage
and Drain-Source Current
D
2.0
2.4
0.3
0.4
0.5
0.6
0.7
0.8
0.9
-50
0
75
100
125 150
V N
O
R
MA
L
IZ
E
D
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E
GS
(t
h
),
T , JUNCTION TEMPERATURE (ºC)
Fig. 3 Gate Threshold Variation with Temperature
J
1
1.1
1.2
-25
25
50
V
=
I = 250µA
DS
D
V
GS
0.4
0.8
1.2
-50
0
75
100
125
150
R
N
O
R
MA
L
IZ
E
D
O
N-
R
ES
IS
T
AN
C
E
DS
(O
N
),
T , JUNCTION TEMPERATURE (ºC)
Fig. 4 On-Resistance Variation with Temperature
J
1.6
1.8
2.2
-25
25
50
0.6
1
1.4
2
V
= 10V
I = 170m
GS
D
0
50
0
5
15
20
25
C
,
C
A
P
A
C
IT
AN
C
E (
p
F
)
V
, DRAIN-SOURCE VOLTAGE (V)
Fig. 5 Typical Capacitance
DS
10
40
30
10
20
C
iss
C
oss
C
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