Diodes BSS84V - Manual (Page 2)

BSS84V
Document number: DS30605 Rev. 9 - 2
2 of 5
www.diodes.com
February 2013
© Diodes Incorporated
BSS84V
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-50 V
Drain-Gate Voltage (Note 5) V
DGR
-50 V
Gate-Source Voltage Continuous V
GSS
20 V
Drain Current (Note 6) Continuous I
D
-130 mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation P
D
150 mW
Thermal Resistance, Junction to Ambient R
θJA
833 C/W
Operating and Storage Temperature Range T
j
, T
STG
-55 to +150 C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-50 -75  V V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current
I
DSS


 

 -1
-2
-100
µA
µA
nA
V
DS
= -50V, V
GS
= 0V, T
J
= +25 C
V
DS
= -50V, V
GS
= 0V, T
J
= +125 C
V
DS
= -25V, V
GS
= 0V, T
J
= +25 C
Gate-Body Leakage I
GSS
  50 nA V
GS
= 20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-0.8 -1.6 -2.0 V V
DS
= V
GS
, I
D
= -1mA
Static Drain-Source On-Resistance R
DS (ON)
 2 10  V
GS
= -5V, I
D
= -0.100A
Forward Transconductance g
FS
0.05   S V
DS
= -25V, I
D
= -0.1A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
  45 pF
V
DS
= -25V, V
GS
= 0V, f = 1.0MHz Output Capacitance C
oss
  25 pF
Reverse Transfer Capacitance C
rss
  12 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
 10  ns V
DD
= -30V, I
D
= -0.27A,
R
GEN
= 50 , V
GS
= -10V Turn-Off Delay Time t
D(OFF)
 18  ns
Notes: 5. R
GS
 20K.
6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
7. Short duration pulse test used to minimize self-heating effect.