Diodes D1213A-01LP4 - Manual (Page 2)

D1213A-01LP4
Document number: DS35760 Rev. 5 - 2
2 of 4
www.diodes.com
August 2012
© Diodes Incorporated
D1213A-01LP4
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit Conditions
Peak Pulse Current I
PP
5 A 8/20 μs, Per Figure 2
ESD Protection – Contact Discharge V
ESD_Contact
±8 kV Standard IEC 61000-4-2
ESD Protection – Air Discharge V ESD_Air
±15 kV Standard IEC 61000-4-2
Thermal Characteristics
Characteristic Symbol Value Unit
Package Power Dissipation (Note 5) P
D
250 mW
Thermal Resistance, Junction to Ambient (Note 5) R θJA 500 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-65 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Conditions
Reverse working voltage V RWM — — 3.3 V —
Reverse current (Note 6) I
R
— 0.1 1.0 μA V
R
= V
RWM
= 3.3V
Reverse breakdown voltage V BR 6.0 — — V I
R
= 1mA
Forward voltage V F
0.6 0.8 0.95 V I
F = 8mA
Reverse clamping voltage, Positive Transients V
CL1
— 10.0 — V I
PP
= 1A, t
p
= 8/20 μs
Reverse clamping voltage, Negative Transients V
CL2
— -1.7 — V I
PP
= -1A, t
p
= 8/20 μs
Dynamic resistance R
DYN
— 0.9 — Ω I
R
= 1A, t
p
= 8/20 μs
Capacitance C
T
— 0.85 1.2 pF V
R
= 1.65V, f = 1MHz
Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
0 25 50 75 100 125 150 175 200
100
75
50
25
0
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Pulse Derating Curve
A
P
EA
K
P
U
LS
E D
E
R
A
T
IN
G
IN
%
O
F
PEA
K POW
E
R OR
CURRENT
0
t, TIME ( s)
Fig. 2 Pulse Waveform
μ
20 40 60
100
50
0
I
, PE
AK P
U
L
S
E
C
URRENT
(
%
I
)
Pp
p
P