Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes D1213A-04SO User Manual

Page 2

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D1213A-04SO

Document number: DS32144 Rev. 12 - 2

2 of 5

www.diodes.com

October 2012

© Diodes Incorporated

D1213A-04SO

NEW PROD

UC

T

Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit Conditions

Operating Supply Voltage

V

P

- V

N

6.0 V

-

DC Voltage at any Channel Input

-

(V

N

– 0.5) to (V

P

+ 0.5)

V -

Peak Pulse Current

I

PP

5 A

8/20 µs, Per Figure 3

ESD Protection – Contact Discharge

V

ESD_Contact

±8 kV

Standard

IEC

61000-4-2

ESD Protection – Air Discharge

V

ESD_Air

±15 kV

Standard

IEC

61000-4-2

Thermal Characteristics

Characteristic Symbol

Value

Unit

Power Dissipation (Note 5)

P

D

300

mW

Thermal Resistance, Junction to Ambient (Note 5)

R

θJA

417

°C/W

Operating and Storage Temperature Range

T

J

, T

STG

-65 to +150

°C




Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Operating Supply Voltage

V

P

3.3 5.5 V

Operating Supply Current (Note 6)

I

P

— — 8.0 µA

(V

P

– V

N

) = 3.3V

Channel Leakage Current (Note 6)

I

R

— 0.1 1.0 µA

V

P

= 5V, V

N

= 0V

Reverse breakdown voltage

V

BR

6.0 — — V

I

R

= 1mA

Clamping Voltage, Positive Transients

V

CL1

10.0 — V

I

PP

= 1A (Note 7)

Clamping Voltage, Negative Transients

V

CL2

— -1.7 — V

I

PP

= -1A (Note 7)

Forward Voltage for Top Diode

V

FD1

0.60 0.80 0.95 V

I

F

= 8mA, any channel to V

P

Forward Voltage for Bottom Diode

V

FD2

0.60 0.80 0.95 V

I

F

= 8mA, V

N

to and channel

Dynamic Resistance

R

DYN

— 0.9 —

I

PP

= 1A (Note 7)

Channel Input Capacitance

C

T

— 0.85 1.2 pF

V

IN

= 1.65V, V

P

= 3.3V,

V

N

= 0V, f = 1MHz

Notes:

5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
7. Clamping voltage value is based on an 8x20

μs peak pulse current (I

pp

) waveform.

8. Measured from any channel to V

N

9. Measured from V

P

to V

N

.

10. For information on the impact of Diodes' USB 2.0 compatible ESD protectors on signal integrity including eye diagram plots, please refer to AN77 at the
following URL: http://www.diodes.com/destools/appnote_dnote.html.





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