Diodes D12V0H1U2LP - Manual (Page 2)

D12V0H1U2LP
Document number: DS36751 Rev. 1 - 2
2 of 4
www.diodes.com
April 2014
© Diodes Incorporated
D12V0H1U2LP
ADVAN
CE I
N
F
O
RM
ATI
O
N
ADVANCED INFORMATION
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit Conditions
Peak Pulse Power Dissipation P
PP
300 W 8/20µs, per Figure 3
Peak Pulse Current I
PP
13 A 8/20µs, per Figure 3
ESD Protection – Contact Discharge V
ESD_Contact
±30 kV IEC 61000-4-2 Standard
ESD Protection – Air Discharge V
ESD_Air
±30 kV IEC 61000-4-2 Standard
Thermal Characteristics
Characteristic Symbol Value Unit
Package Power Dissipation (Note 5) P
D
250 mW
Thermal Resistance, Junction to Ambient (Note 5) R
θJA
500 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-65 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Conditions
Reverse Working Voltage V
RWM
— — 12.0 V —
Reverse Current (Note 6) I
R
— 2 50 nA V
R
= V
RWM
= 12.0V
Reverse Breakdown Voltage V
BR
13.3 — 15.75 V I
R
= 1mA
Reverse Clamping Voltage V
CL
— — 19
V
I
PP
= 5A, t
p
= 8/20μs
— — 23 I
PP
= 13A, t
p
= 8/20μs
Capacitance C
T
— 80 95 pF V
R
= 0V, f = 1MHz
Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
0 125 175
150
50
100
0
T , AMBIENT TEMPERATURE ( C)
Figure 1 Power Derating Curve
A
°
P
, P
O
WE
R
DI
SSI
P
AT
IO
N
(mW
)
D
25 100 50 75 150
25
75
125
250
175
Note 5
200
225
0
50
25 50 75 100 125 150
P
E
A
K
P
U
L
SE
D
E
R
A
T
IN
G
%
O
F
P
EAK
PO
W
E
R O
R
CUR
RENT
T , AMBIENT TEMPERATURE (°C)
Figure 2 Pulse Derating Curve
A
0
100
25
75
175 200