Diodes D20V0L1B2WS - Manual (Page 2)

D20V0L1B2WS
Document number: DS35943 Rev. 3 - 2
2 of 4
www.diodes.com
April 2014
© Diodes Incorporated
D20V0L1B2WS
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit Conditions
Peak Pulse Power Dissipation P
PP
90 W 8/20µs, Per Figure 2
Peak Pulse Current I
PP
3 A 8/20µs, Per Figure 2
ESD Protection – Contact Discharge V
ESD_Contact
±30 kV Standard IEC 61000-4-2
ESD Protection – Air Discharge V
ESD_Air
±30 kV Standard IEC 61000-4-2
Thermal Characteristics
Characteristic Symbol Value Unit
Package Power Dissipation (Note 5) P
D
200 mW
Thermal Resistance, Junction to Ambient (Note 5) R
θJA
625 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-65 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Conditions
Reverse Standoff Voltage V
RWM
— — 20 V —
Channel Leakage Current (Note 6) I
RM
— — 100 nA V
RWM
= 20V
Clamping Voltage, Positive Transients V
CL
—  — 27 V I
PP
= 1A, t
p
= 8/20μS
— — 30 V I
PP
= 3A, t
p
= 8/20μS
Breakdown Voltage V
BR
21 — 25 V I
R
= 1mA
Differential Resistance R
DIF
—  1.8 — Ω I
R
= 1A, t
p
= 8/20μS
Channel Input Capacitance C
T
— 10 15 pF V
R
= 0V, f = 1MHz
Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
0 120 160 200
250
200
150
50
40 80
100
0
T , AMBIENT TEMPERATURE ( C)
Figure 1 Power Derating Curve
A
°
P
, P
O
WE
R
DI
SSI
P
AT
IO
N (
m
W
)
D
Note 5
0
t, TIME ( s)
Figure 2 Pulse Waveform

20 40 60
100
50
0
I
, PE
AK P
U
LS
E
C
URRENT
(
%
I
)
Pp
p
P