Diodes D5V0L1B2LP4 - Manual (Page 2)

D5V0L1B2LP4
Document number: DS35586 Rev. 6 - 2
2 of 5
www.diodes.com
May 2014
© Diodes Incorporated
D5V0L1B2LP4
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit Conditions
Peak Pulse Power Dissipation P
PP
84 W 8/20µs, Per Figure 1
Peak Pulse Current I
PP
6 A 8/20µs, Per Figure 1
ESD Protection – Contact Discharge V
ESD_Contact
±30 kV IEC 61000-4-2 Standard
ESD Protection – Air Discharge V
ESD_Air
±30 kV IEC 61000-4-2 Standard
Thermal Characteristics
Characteristic Symbol Value Unit
Package Power Dissipation (Note 5) P
D
250 mW
Thermal Resistance, Junction to Ambient (Note 5) R
θJA
500 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-65 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Conditions
Reverse Standoff Voltage V
RWM
— — 5 V —
Channel Leakage Current (Note 5) I
RM
— 10 100 nA V
RWM
= 5V
Clamping Voltage, Positive Transients V
CL
—
—
—
— 7.0
9.0
10.5
11.5
9.0
11.0
12.0
14.0
V
I
PP
= 1A, t
p
= 8/20μS
I
PP
= 3.5A, t
p
= 8/20μS
I
PP
= 5A, t
p
= 8/20μS
I
PP
= 6A, t
p
= 8/20μS
Breakdown Voltage V
BR
6 7 8 V I
R
= 1mA
Differential Resistance R
DIF
— 0.2 — Ω I
R
= 1A, t
p
= 8/20μS
Channel Input Capacitance C
T
— 15 20 pF V
R
= 0V, f = 1MHz
Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
0
t, TIME ( s)
Fig. 1 Pulse Waveform
μ
20 40 60
100
50
0
I
, PE
AK P
U
LS
E
C
URRENT
(
%
I
)
Pp
p
P
10
11
12
13
14
15
16
17
18
0 1 2 3 4 5 6
V , REVERSE VOLTAGE (V)
Fig. 2 Typical Total Capacitance vs. Reverse Voltage
R
C
, T
O
TAL
C
A
P
A
C
IT
AN
C
E (
p
F)
T
f = 1 MHz