Diodes CTA2P1N - Manual (Page 2)

DS30296 Rev. 9 - 2 2 of 5
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CTA2P1N
© Diodes Incorporated
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UC
T
Electrical Characteristics, Q1, MMBT4403 PNP Transistor Element
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
V
(BR)CBO
-40 ⎯ V I
C
= -100 μA, I
E
= 0
Collector-Emitter Breakdown Voltage V
(BR)CEO
-40 ⎯ V I
C
= -1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage V
(BR)EBO
-5.0 ⎯ V I
E
= -100 μA, I
C
= 0
Collector Cutoff Current I
CEX
⎯ -100 nA V
CE
= -35V, V
EB(OFF)
= -0.4V
Base Cutoff Current I
BL
⎯ -100 nA V
CE
= -35V, V
EB(OFF)
= -0.4V
ON CHARACTERISTICS (Note 5)
DC Current Gain h
FE
30
60
100
100
20
⎯
⎯
⎯
300
⎯
⎯
I
C
= -100µA, V
CE
= -1.0V
I
C
= -1.0mA, V
CE
= -1.0V
I
C
= -10mA, V
CE
= -1.0V
I
C
= -150mA, V
CE
= -2.0V
I
C
= -500mA, V
CE
= -2.0V
Collector-Emitter Saturation Voltage V
CE(SAT)
⎯
-0.40
-0.75
V
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
Base-Emitter Saturation Voltage V
BE(SAT)
-0.75
⎯
-0.95
-1.30
V
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
cb
⎯ 8.5 pF V
CB
= -10V, f = 1.0MHz, I
E
= 0
Input Capacitance C
eb
⎯ 30 pF V
EB
= -0.5V, f = 1.0MHz, I
C
= 0
Input Impedance h
ie
1.5 15 k Ω
Voltage Feedback Ratio h
re
0.1 8.0 x 10 -4
Small Signal Current Gain h
fe
60 500 ⎯
Output Admittance h
oe
1.0 100 μS
V
CE
= -10V, I
C
= -1.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product f
T
200 ⎯ MHz
V
CE
= -10V, I
C
= -20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time
t
d
⎯ 15 ns
Rise Time t
r
⎯ 20 ns
V
CC
= -30V, I
C
= -150mA,
V
BE(off)
= -2.0V, I
B1
= -15mA
Storage Time t
s
⎯ 225 ns
Fall Time t
f
⎯ 30 ns
V
CC
= -30V, I
C
= -150mA,
I
B1
= I
B2
= -15mA
Electrical Characteristics, Q2, 2N7002 N-Channel MOSFET Element
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BV
DSS
60 70 ⎯ V V
GS
= 0V, I
D
= 10 μA
Zero Gate Voltage Drain Current @ T
C
= 25°C
@ T
C
= 125°C
I
DSS
⎯ ⎯
1.0
500
µA V
DS
= 60V, V
GS
= 0V
Gate-Body Leakage I
GSS
⎯ ⎯ ±10 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(th)
1.0 ⎯ 2.0 V V
DS
= V
GS
, I
D
=-250 μA
V
GS
= 5.0V, I
D
= 0.05A Static Drain-Source On-Resistance @ T
j
= 25°C
@ T
j
= 125°C
R
DS (ON)
⎯
3.2
4.4 7.5
13.5
Ω
V
GS
= 10V, I
D
= 0.5A
On-State Drain Current I
D(ON)
0.5 1.0 ⎯ A V
GS
= 10V, V
DS
= 7.5V
Forward Transconductance g
FS
80 ⎯ ⎯ mS V
DS
=10V, I
D
= 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯ 22 50 pF
Output Capacitance C
oss
⎯ 11 25 pF
Reverse Transfer Capacitance C
rss
⎯ 2.0 5.0 pF
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
⎯ 7.0 20 ns
Turn-Off Delay Time t
D(OFF)
⎯ 11 20 ns
V
DD
= 30V, I
D
= 0.2A,
R
L
= 150 Ω, V
GEN
= 10V, R
GEN
= 25 Ω
Notes: 5. Short duration pulse test used to minimize self-heating effect.