Diodes AL5802 - Manual (Page 3)

AL5802
Document number: DS35516 Rev. 9 - 2
3 of 11
www.diodes.com
March 2014
© Diodes Incorporated
ADVAN
CE I
N
F
O
RM
ATI
O
N
NEW PROD
UC
T
AL5802
Package Thermal Data
Characteristic Symbol Value Unit
Power Dissipation (Note 5) @ T
A
= +25°C
Power Dissipation (Note 6) @ T
A
= +25°C
Power Dissipation (Note 7) @ T
A
= +25°C
P
D
0.37
0.87
1
W
Thermal Resistance, Junction to Ambient Air (Note 5) @ T
A
= +25°C
Thermal Resistance, Junction to Ambient Air (Note 6) @ T
A
= +25°C
Thermal Resistance, Junction to Ambient Air (Note 7) @ T
A
= +25°C
R
θJA
335
143
120
°C/W
Notes: 5. Device mounted on FR-4 PCB, 2oz with minimum recommended pad layout.
6. Device mounted on 25mm x 25mm 2oz copper board.
7. Device mounted on 50mm x 50mm 2oz copper board.
Recommended Operating Conditions
Symbol Parameter Min Max Unit
V
BIAS
Supply voltage range 4.5 30
V
V
OUT
OUT voltage range 0.8 30
I
LED
LED pin current (Note 8) 10 120 mA
T
A
Operating ambient temperature range -40 +125 °C
Note: 8. Subject to ambient temperature, power dissipation and PCB.
Electrical Characteristics – NPN Transistor – Q1
(@T
A
= +25°C, unless otherwise specified.)
Symbol Characteristic Test Condition Min Typ Max Unit
V
(BR)CEO
Collector-Emitter Breakdown Voltage (Note 9) I
C
= 1.0mA, I
B
= 0 40 — — V
V
(BR)EBO
Emitter-Base Breakdown Voltage I
E
= 10µA, I
C
= 0 6.0 — — V
I
CEX
Collector Cutoff Current V
CE
= 30V, V
EB(OFF)
= 3.0V — — 50 nA
I
BL
Base Cutoff Current V
CE
= 30V, V
EB(OFF)
= 3.0V — — 50 nA
h
FE
DC Current Gain
I
C
= 100µA, V
CE
= 1.0V
I
C
= 1.0mA, V
CE
= 1.0V
I
C
= 10mA, V
CE
= 1.0V
40
70
100
—
—
— —
—
300
—
V
CE(SAT)
Collector-Emitter Saturation Voltage (Note 9) I
C
= 10mA, I
B
= 1.0mA — — 0.20 V
V
BE(SAT)
Base-Emitter Saturation Voltage I
C
= 10mA, I
B
= 1.0mA 0.65 — 0.85 V
Electrical Characteristics – NPN Pre-biased Transistor – Q2
(@T
A
= +25°C, unless otherwise specified.)
Symbol Characteristic Test Condition Min Typ Max Unit
V
(BR)CBO
Collector-Base Breakdown Voltage I
C
= 50μA, I
E
= 0 30 — — V
V
(BR)CEO
Collector-Emitter Breakdown Voltage (Note 9) I
C
= 1mA, I
B
= 0 30 — — V
V
(BR)EBO
Emitter-Base Breakdown Voltage I
E
= 50μA, I
C
= 0 5.0 — — V
I
CBO
Collector Cut-Off Current V
CB
= 30V, I
E
= 0 — — 0.5 µA
I
EBO
Emitter Cut-Off Current V
EB
= 4V, I
C
= 0 — — 0.5 µA
V
CE(SAT)
Collector-Emitter Saturation Voltage (Note 9) I
C
= 10mA, I
B
= 1mA — — 0.3 V
h
FE
DC Current Gain (Note 9) V
CE
= 5V, I
C
= 150mA 100 — — —
R
1
Input Resistance — 7 10 13 kΩ
*Characteristics of transistor only.
Note: 9. Short duration pulse test used to minimize self-heating effect.