Data sheet, Application information (continued), Short circuit protection – Diodes AP3431 User Manual

Page 15: Efficiency considerations, Thermal characteristics, Pcb layout considerations, Qf i, Dr d r r, Ч + ч = 1

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Data Sheet

1.0MHz, 2.0A, Synchronous Step Down DC-DC Converter AP3431

Nov. 2011 Rev. 1. 0 BCD Semiconductor Manufacturing Limited

15

Application Information (Continued)


5. Short Circuit Protection

When the AP3431 output node is shorted to GND, as
V

FB

drop under

0.4V, the chip will enter soft-start

mode to protect itself, when short circuit is removed,
and V

FB

rise over 0.4V, the AP3431 recover back to

normal operation again. If the AP3431 reach OCP
threshold while short circuit, the AP3431 will enter
soft-start cycle until the current under OCP threshold.


6.

Efficiency Considerations

The efficiency of switching regulator is equal to the
output power divided by the input power times 100%.
It is usually useful to analyze the individual losses to
determine what is limiting efficiency and which
change could produce the largest improvement.
Efficiency can be expressed as:

Efficiency=100%-L1-L2-…..

Where L1, L2, etc. are the individual losses as a
percentage of input power.

Although all dissipative elements in the regulator
produce losses, two major sources usually account for
most of the power losses: V

IN

quiescent current and

I

2

R losses. The V

IN

quiescent current loss dominates

the efficiency loss at very light load currents and the
I

2

R loss dominates the efficiency loss at medium to

heavy load currents.

6.1
The V

IN

quiescent current loss comprises two

parts: the DC bias current as given in the electrical
characteristics and the internal MOSFET switch gate
charge currents. The gate charge current results from
switching the gate capacitance of the internal power
MOSFET switches. Each cycle the gate is switched
from high to low, then to high again, and the packet
of charge, dQ moves from V

IN

to ground. The

resulting dQ/dt is the current out of V

IN

that is

typically larger than the internal DC bias current. In
continuous mode,



Where Q

P

and Q

N

are the gate charge of power

PMOSFET and NMOSFET switches. Both the DC
bias current and gate charge losses are proportional to


the V

IN

and this effect will be more serious at higher

input voltages.

6.2 I

2

R losses are calculated from internal switch

resistance, R

SW

and external inductor resistance R

L

.

In continuous mode, the average output current
flowing through the inductor is chopped between
power PMOSFET switch and NMOSFET switch.
Then, the series resistance looking into the SW pin is
a function of both PMOSFET and NMOSFET R

DS(ON)

resistance and the duty cycle (D) are as follows:

R

DS(ON)

resistance and the duty cycle (D):



Therefore, to obtain the I

2

R losses, simply add R

SW

to

R

L

and multiply the result by the square of the

average output current.

Other losses including C

IN

and C

OUT

ESR dissipative

losses and inductor core losses generally account for
less than 2 % of total additional loss.

7. Thermal Characteristics

In most applications, the part does not dissipate much
heat due to its high efficiency. However, in some
conditions when the part is operating in high ambient
temperature with high R

DS(ON)

resistance and high

duty cycles, such as in LDO mode, the heat
dissipated may exceed the maximum junction
temperature. To avoid the part from exceeding
maximum junction temperature, the user should do
some thermal analysis. The maximum power
dissipation depends on the layout of PCB, the thermal
resistance of IC package, the rate of surrounding
airflow and the temperature difference between
junction and ambient.

8. PCB Layout Considerations

When laying out the printed circuit board, the
following checklist should be used to optimize the
performance of AP3431.

1) The power traces, including the GND trace, the SW

trace and the VIN trace should be kept direct, short
and wide.

2) Put the input capacitor as close as possible to the V

)

(

N

P

GATE

Q

Q

f

I

+

×

=

(

)

(

)

)

(

D

R

D

R

R

N

ON

DS

P

ON

DS

SW

Ч

+

Ч

=

1

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