Electrical characteristics – Diodes AP2192A User Manual
Page 4
AP2182A/ AP2192A
Document number: DS32193 Rev. 3 - 2
4 of 16
March 2013
© Diodes Incorporated
AP2182A/ AP2192A
Electrical Characteristics
(@T
A
= +25°C, V
IN
= +5.0V, unless otherwise specified.)
Symbol
Parameter
Test Conditions (Note 5)
Min
Typ
Max
Unit
V
UVLO
Input UVLO
1.6
2.0
2.4
V
I
SHDN
Input Shutdown Current
Disabled, I
OUT
= 0
0.1 1 µA
I
Q
Input Quiescent Current, Dual
Enabled, I
OUT
= 0
115
180
µA
I
LEAK
Input Leakage Current
Disabled, OUT grounded
1
µA
I
REV
Reverse Leakage Current
Disabled, V
IN
= 0V, V
OUT
= 5V, I
REV
at V
IN
0.01
0.1
µA
R
DS(ON)
Switch On-Resistance
V
IN
= 5V, I
OUT
= 1.5A,
T
A
= +25°C
SO-8
90
110
m
Ω
MSOP-8EP,
U-DFN3030-8
85
105
V
IN
= 5V, I
OUT
= 1.5A, -40°C
≤ T
A
≤ +85°C
135
V
IN
= 3.3V, I
OUT
= 1.5A,
T
A
= +25°C
SO-8
110
130
MSOP-8EP,
U-DFN3030-8
105
125
V
IN
= 3.3V, I
OUT
= 1.5A, -40°C
≤ T
A
≤ +85°C
170
I
LIMIT
Over-Load Current Limit
V
IN
= 5V, V
OUT
= 4V, C
L
= 10µF -40°C
≤ T
A
≤ +85°C
1.6 2.0 2.4 A
I
LIMIT_G
Ganged Over-Load Current Limit
V
IN
= 5V, V
OUT
= 4.6V, OUT1 &
OUT2 tied together, C
L
= 10µF
-40°C
≤ T
A
≤ +85°C
3.2 4.0 4.8 A
I
Trig
Current Limiting Trigger Threshold
Output Current Slew rate (<100A/s), C
L
= 10µF
2.5 A
I
Trig_G
Ganged Current Limiting Trigger
Threshold
OUT1 & OUT2 tied together, Output Current Slew rate
(<100A/s), C
L
= 10µF
5.0 A
I
OS
Short-Circuit Current per Channel
OUTx connected to ground, device enabled into short
circuit, C
L
= 10µF
2.0 A
I
OS_G
Ganged Short-Circuit Current
OUT1 & OUT2 connected to ground, device enabled into
short-circuit, C
L
= 10µF
3.2 4.0 4.8 A
T
SHORT
Short-Circuit Response Time
V
OUT
= 0V to I
OUT
= I
LIMIT
(output shorted to ground)
2 µs
V
IL
EN Input Logic Low Voltage
V
IN
= 2.7V to 5.5V
0.8
V
V
IH
EN Input Logic High Voltage
V
IN
= 2.7V to 5.5V
2 V
I
SINK
EN Input Leakage
V
EN
= 0V to 5.5V
1
µA
I
LEAK-O
Output Leakage Current
Disabled, V
OUT
= 0V
0.5 1 µA
T
R
Output Turn-On Rise Time
C
L
= 1µF, R
LOAD
= 5
Ω
0.6
1.5
ms
T
F
Output Turn-Off Fall Time
C
L
= 1µF, R
LOAD
= 5
Ω
0.05
0.3
ms
T
D(ON)
Output Turn-On Delay Time
C
L
= 100µF, R
LOAD
= 5
Ω
0.2
0.5
ms
T
D(OFF)
Output Turn-Off Delay Time
C
L
= 100µF, R
LOAD
= 5
Ω
0.1
0.3
ms
R
FLG
FLG Output FET On-Resistance
I
FLG
= 10mA
20
40
Ω
I
FOH
FLG Off Current
V
FLG
= 5V
0.01 1 µA
T
Blank
FLG Blanking Time
C
L
= 10µF
4 7 15
ms
R
DIS
Discharge Resistance (Note 6)
V
IN
= 5V, disabled, I
OUT
=1mA
100
Ω
T
SHDN
Thermal Shutdown Threshold
Enabled, R
LOAD
=1k
Ω
140
C
T
HYS
Thermal Shutdown Hysteresis
25
C
θ
JA
Thermal Resistance Junction-to-Ambient
SO-8 (Note 7)
115
°C/W
MSOP-8EP (Note 8)
75
U-DFN3030-8 (Note 8)
60
Notes:
5. Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
6. The discharge function is active when the device is disabled (when enable is de-asserted or during power-up / power-down when V
IN
< V
UVLO
). The
discharge function offers a resistive discharge path for the external storage capacitor for limited time.
7. Test condition for SO-8: Device mounted on FR-4 substrate PCB with minimum recommended pad layout.
8. Test condition for MSOP-8EP and U-DFN3030-8: Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended pad on top
layer and thermal vias to bottom layer ground plane.