Electrical characteristics – Diodes AP2181/ AP2191 User Manual

Page 4

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AP2181/ AP2191

Document number: DS31563 Rev. 7 - 2

4 of 17

www.diodes.com

March 2013

© Diodes Incorporated

AP2181/ AP2191


Electrical Characteristics

(@T

A

= +25°C, VIN = +5V, unless otherwise specified.)

Symbol Parameter

Test

Conditions

Min

Typ

Max

Unit

V

UVLO

Input UVLO

R

LOAD

= 1k

1.6 1.9 2.5 V

I

SHDN

Input Shutdown Current

Disabled, I

OUT

= 0

0.5 1 A

I

Q

Input Quiescent Current

Enabled, I

OUT

= 0

45

70

µA

I

LEAK

Input Leakage Current

Disabled, OUT grounded

1

µA

I

REV

Reverse Leakage Current

Disabled, V

IN

= 0V, V

OUT

= 5V, I

REV

at V

IN

1 µA

R

DS(ON)

Switch On-Resistance

V

IN

= 5V,

I

OUT

= 1.5A

T

A

= +25°C

SOT25, MSOP-8EP, SO-8

95

115

m

U-DFN2018-6

90

110

-40

C ≤ T

A

≤ +85°C

140

V

IN

= 3.3V,

I

OUT

= 1.5A

T

A

= +25°C

120

140

-40

C ≤ T

A

≤ +85°C

170

I

SHORT

Short-Circuit Current Limit

Enabled into short circuit, C

L

= 100µF

2.0 A

I

LIMIT

Over-Load Current Limit

V

IN

= 5V, V

OUT

= 4.5V, C

L

= 120µF, -40°C

≤ T

A

≤ +85°C

1.6 2.1 2.6 A

I

Trig

Current Limiting Trigger Threshold

Output Current Slew Rate (<100A/s) , C

L

= 100µF

2.6 A

V

IL

EN Input Logic Low Voltage

V

IN

= 2.7V to 5.5V

0.8

V

V

IH

EN Input Logic High Voltage

V

IN

= 2.7V to 5.5V

2 V

I

SINK

EN Input Leakage

V

EN

= 5V

1

µA

T

D(ON)

Output Turn-On delay time

C

L

= 1µF, R

LOAD

= 10

0.05 ms

T

R

Output Turn-On rise time

C

L

= 1µF, R

LOAD

= 10

0.6

1.5

ms

T

D(OFF)

Output Turn-Off delay time

C

L

= 1µF, R

LOAD

= 10

0.01 ms

T

F

Output Turn-Off fall time

C

L

= 1µF, R

LOAD

= 10

0.05

0.1 ms

R

FLG

FLG Output FET On-Resistance

I

FLG

= 10mA, C

L

= 100µF

20

40

T

Blank

FLG Blanking Time

C

IN

= 10µF, C

L

= 100µF

4 7 15

ms

T

SHDN

Thermal Shutdown Threshold

Enabled, R

LOAD

= 1k

140

C

T

HYS

Thermal Shutdown Hysteresis

25

C

θ

JA

Thermal Resistance Junction-to-
Ambient

SO-8 (Note 5)

110

C/W

MSOP-8EP (Note 6)

60

C/W

SOT25 (Note 7)

157

C/W

U-DFN2018-6 (Note 8)

70

C/W

Notes:

5. Test condition for SO-8: Device mounted on FR-4, 2oz copper, with minimum recommended pad layout.

6. Test condition for MSOP-8EP: Device mounted on 2” x 2” FR-4 substrate PC board, 2oz copper, with minimum recommended pad on top layer and

thermal vias to bottom layer ground plane.

7. Test condition for SOT25: Device mounted on FR-4, 2oz copper, with minimum recommended pad layout.

8. Test condition for U-DFN2018-6: Device mounted on FR-4 2-layer board, 2oz copper, with minimum recommended pad on top layer and 3 vias to bottom

layer 1.0”x1.4” ground plane.























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